BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Very low switching losses Low reverse current High reverse voltage Material categorization: for definitions of compliance please see 949539 www.vishay.com/doc 99912 APPLICATIONS click logo to get started DESIGN SUPPORT TOOLS Switched mode power supplies High-frequency inverter circuits Models Available MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYV26E BYV26E-TR 5000 per 10 tape and reel 25 000 BYV26E BYV26E-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYV26A V = 200 V I = 1 A SOD-57 R F(AV) BYV26B V = 400 V I = 1 A SOD-57 R F(AV) BYV26C V = 600 V I = 1 A SOD-57 R F(AV) BYV26D V = 800 V I = 1 A SOD-57 R F(AV) BYV26E V = 1000 V I = 1 A SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYV26A V = V 200 V R RRM BYV26B V = V 400 V R RRM Reverse voltage = repetitive peak reverse See electrical characteristics BYV26C V = V 600 V R RRM voltage BYV26D V = V 800 V R RRM BYV26E V = V 1000 V R RRM Peak forward surge current t = 10 ms, half sine wave I 30 A p FSM Average forward current I 1A F(AV) Non repetitive reverse avalanche energy I = 1 A, inductive load E 10 mJ (BR)R R Junction and storage temperature range T = T -55 to +175 C j stg Rev. 1.8, 21-Feb-18 Document Number: 86040 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction ambient l = 10 mm, T = constant R 45 K/W L thJA ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 1 A V -- 2.5 V F F Forward voltage I = 1 A, T = 175 C V -- 1.3 V F j F V = V I -- 5 A R RRM R Reverse current V = V , T = 150 C I - - 100 A R RRM j R BYV26A V 300 - - V (BR)R BYV26B V 500 - - V (BR)R Reverse breakdown voltage I = 100 A BYV26C V 700 - - V R (BR)R BYV26D V 900 - - V (BR)R BYV26E V 1100 - - V (BR)R BYV26A t - - 30 ns rr BYV26B t - - 30 ns rr Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A BYV26C t - - 30 ns F R R rr BYV26D t - - 75 ns rr BYV26E t - - 75 ns rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 600 1000 V = V V = V R RRM R RRM 500 R = 45 K/W thJA 100 R = 100 K/W thJA 200 V 400 400 V 300 10 600 V 200 800 V 1 100 1000 V 0 0.1 040 80 120 160 200 200 040 80 120 160 959729 T - Junction Temperature (C) T - Junction Temperature (C) 959728 j j Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Max. Reverse Current vs. Junction Temperature Rev. 1.8, 21-Feb-18 Document Number: 86040 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Max. Reverse Power Dissipation (mW) R I - Reverse Current (A) R