STTH802SF Datasheet 200 V ultrafast recovery diode Features Low profile design package typical height of 1.1 mm typ. Wettable flanks for automatic visual inspection Very low conduction losses Negligible switching losses High junction temperature capability ECOPACK 2 compliant Applications DC/DC converter High frequency inverter Snubber Boost function Freewheeling diode Description This device is an ultrafast recovery diode optimized for switching mode base drive and transistor circuits. Packaged in PSMC (TO-277A), the STTH802SF provides a high level of performance in a compact and flat package which can withstand very high operating junction temperature. Product status link STTH802SF Product summary Symbol Value I 8 A F(AV) V 200 V RRM T (max.) 175 C j V (typ.) 0.79 V F t (typ.) 17 ns rr DS12649 - Rev 2 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STTH802SF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified, anode terminals short- circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I Average forward current, = 0.5 square pulse T = 145 C 8 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 150 A FSM p T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature +175 C j Table 2. Thermal resistance parameters Symbol Parameter Typ. value Unit R Junction to case 2.4 C/W th(j-c) For more information, please refer to the following application note: AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (anode terminals short-circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 6 j (1) I Reverse leakage current V = V A R RRM R T = 125 C - 6 60 j T = 25 C - 0.94 1.08 j (2) V Forward voltage drop I = 8 A V F F T = 125 C - 0.79 0.91 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p 2 To evaluate the conduction losses, use the following equation: P = 0.77 x I + 0.018 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses in a power diode Table 4. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I = 1.0 A, dI /dt = -50 A/s, V = 30 V - 35 F F R t Reverse recovery time T = 25 C ns rr j I = 1.0 A, dI /dt = -100 A/s, V = 30 V - 17 22 F F R I Reverse recovery current - 5.8 7.5 A RM T = 125 C I = 8 A, dl /dt = -200 A/s, V = 160 V j F F R Q Reverse recovery charge - 100 nC rr DS12649 - Rev 2 page 2/10