X-On Electronics has gained recognition as a prominent supplier of STTH806TTI Rectifiers across the USA, India, Europe, Australia, and various other global locations. STTH806TTI Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

STTH806TTI STMicroelectronics

STTH806TTI electronic component of STMicroelectronics
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Part No.STTH806TTI
Manufacturer: STMicroelectronics
Category: Rectifiers
Description: Rectifiers 8.0 Amp 600 Volt
Datasheet: STTH806TTI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.7635 ea
Line Total: USD 763.5 
Availability - 37
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
37
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.7635
2000 : USD 0.7173
5000 : USD 0.7102

228
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.329
10 : USD 1.2979
30 : USD 1.2766
100 : USD 1.2533

35
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.52
3 : USD 2.254
10 : USD 1.722
28 : USD 1.624

37
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 39
Multiples : 39
39 : USD 0.7635
2000 : USD 0.7173
5000 : USD 0.7102

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STTH806TTI from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STTH806TTI and other electronic components in the Rectifiers category and beyond.

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STTH806TTI TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS I 8A F(AV) 12 3 V 600 V (in series) RRM Tj (max) 150 C V (max) 2.6 V F I (typ.) 4 A RM 3 2 1 FEATURES AND BENEFITS Insulated TO-220AB n ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING DESCRIPTION CONDITIONS. The TURBOSWITCH H is an ultra high n DESIGNED FOR HIGH DI/DT OPERATION. performance diode composed of two 300V dice in n ULTRA-FAST RECOVERY CURRENT TO series. TURBOSWITCH H family drastically cuts COMPETE WITH GaAs DEVICES. SIZE losses in the associated MOSFET when run at DIMINUTION OF MOSFET AND HEATSINKS high dI /dt. F ALLOWED. n INTERNAL CERAMIC INSULATED PACKAGE ALLOWS FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK. n MATCHED DIODES FOR TYPICAL PFC APPLICATION WITHOUT VOLTAGE BALANCE NETWORK. n INSULATED VERSION: : Insulated voltage = 2500 V (RMS) Capacitance = 7 pF ABSOLUTE RATINGS (limiting values for both diodes in series) Symbol Parameter Value Unit V 600 V RRM Repetitive peak reverse voltage I 14 A F(RMS) RMS forward current I 80 A FSM Surge non repetitive forward current tp = 10 ms sinusoidal T -65 +150 C stg Storage temperature range Tj + 150 C Maximum operating junction temperature TM: TURBOSWITCH is a trademark of STMicroelectronics February 2003 - Ed: 4B 1/5STTH806TTI THERMAL AND POWER DATA Symbol Parameter Test conditions Value Unit R 5 C/W th (j-c) Junction to case thermal resistance Per diode R 0.2 th (c) Coupling R 2.6 th (j-c) Junction to case thermal resistance Total P 27 W 1 Conduction power dissipation for I =8A = 0.5 F(AV) both diodes Tc = 80C STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 10 A R Reverse leakage cur- V =V Tj = 25C R RRM rent 15 100 Tj = 125C V ** 3.6 V F Forward voltage drop I = 8A Tj=25C F 2.1 2.6 Tj = 125C Pulse test : * tp=5ms, <2% ** tp = 380 s, <2% To evaluate the maximum conduction losses use the following equation : 2 P=1.8xI + 0.1 I F(AV) F (RMS) RECOVERY CHARACTERISTICS Symbol Tests Conditions Min. Typ. Max. Unit trr 13 ns I = 0.5 A Irr = 0.25 A I = 1 A Tj = 25C F R 30 I =1A dI /dt=-50A/sV =30V F F R I 4 5.5 A RM V = 400 V I =8A dI /dt = -200 A/s Tj = 125C R F F S 0.4 - factor TURN-ON SWITCHING CHARACTERISTICS Symbol Tests Conditions Min. Typ. Max. Unit tfr 200 ns I =8A dI /dt = 100 A/s, Tj = 25C F F measured at 1.1 x V max F V 7V FP I =8A dI /dt = 100 A/s Tj = 25C F F 2/5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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