STTH75S12W STMicroelectronics

STTH75S12 Turbo 2 ultrafast high voltage rectifier Datasheet production data Description The STTH75S12 is developed using STs Turbo 2 K 1200 V technology. It is well-suited as a boost diode, especially for use in UPS. Table 1. Device summary Symbol Value I 75 A F(AV) A D4O-27 V 1200 V RRM K t (typ) 40 ns rr V (typ) 1.9 V F T (max) 175 C j Features Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses September 2014 DocID026666 Rev 1 1/8 This is information on a product in full production. www.st.com 8Characteristics STTH75S12 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM I Forward rms current 106 A F(RMS) I Average forward current, = 0.5 T = 80 C 75 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 370 A FSM p T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case 0.35 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 50 A j (1) I Reverse leakage current V = V R R RRM mA T = 150 C 0.2 2 j T = 25 C 3.2 j (2) V Forward voltage drop I = 75 A V F F T = 150 C 1.9 2.7 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.8 x I + 0.012 I F(AV) F (RMS) Table 5. Dynamic characteristics Test conditions Symbol Parameter Min. Typ. Max. Unit I = 1 A, V = 30 V, F R t Reverse recovery time T = 25 C 40 55 ns rr j dI /dt = 200 A/s F I Reverse recovery current 26 37 A RM I = 75A, V = 600 V, F R S Softness factor T = 125 C 1.2 j dI /dt = 200 A/s F Q Reverse recovery charge 5300 nC RR 2/8 DocID026666 Rev 1