STTH802CB-TR STMicroelectronics

STTH802C High efficiency ultrafast diode Datasheet - production data Description Dual center tap rectifier suited for switched mode . power supply and high frequency DC to DC converters. Packaged in DPAK, this device is intended for use . in low voltage, high frequency inverters, . freewheeling and polarity protection applications. Table 1. Device summary Symbol Value I 2 X 4 A . 3 F(AV) V 200 V RRM T (max) 175 C j Features V (typ.) 0.81 V F Suited for SMPS t (typ.) 13 ns rr Low losses Low forward and reverse recovery time High surge current capability High junction temperature ECOPACK 2 compliant component for DPAK on demand November 2016 DocID8723 Rev 3 1/9 This is information on a product in full production. www.st.comCharacteristics STTH802C 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C per diode, unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I Forward rms current 10 A F(RMS) T = 155 C Per diode 4 c Average forward current, I A F(AV) = 0.5, square wave T = 150 C Per device 8 c t = 10 ms sinusoidal I Surge non repetitive forward current 50 A p FSM T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal resistances Symbol Parameter Max. value Unit Per diode 4 R Junction to case th(j-c) Total 2.5 C/W R Coupling 1.0 th(c) When the diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -4 j (1) I Reverse leakage current V = V A R R RRM T = 125 C - 2 40 j T = 25 C -1.10 j I = 4 A F T = 125 C - 0.81 0.95 j (2) V Forward voltage drop V F T = 25 C -1.25 j I = 8 A F T = 125 C - 0.95 1.10 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.80 x I + 0.037 x I F(AV) F (RMS) 2/9 DocID8723 Rev 3