STTH802SFY Datasheet Automotive 200 V ultrafast recovery diode Features AEC-Q101 qualified Very low conduction losses Negligible switching losses 175 C maximum junction temperature V guaranteed from -40 C to 175 C RRM Wettable flanks for automatic visual inspection PPAP capable ECOPACK 2 compliant component Application DC/DC converters Reverse polarity protection Snubber Boost function Freewheeling diode Description The STTH802SFY ultrafast recovery diode has been designed for automotive Product status link applications. STTH802SFY Packaged in PSMC (TO-277A), this device provides a high level of performance in a compact and flat package which can withstand high operating junction temperature. Product summary Symbol Value I 8 A F(AV) V 200 V RRM T (max.) 175 C j V (typ.) 0.79 V F t (typ.) 17 ns rr DS12467 - Rev 1 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STTH802SFY Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified with 2 anode terminals short-circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage (T = -40 C to +175 C) 200 V RRM j I Average forward current T = 145 C , = 0.5 square pulse 8 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 150 A FSM p T Storage temperature range -65 to +175 C stg (1) T Operating junction temperature range -40 to +175 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Typ. Unit R Junction to case 2.4 C/W th(j-c) For more information, please refer to the following application note: AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (anode terminals short-circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 6 j (1) I Reverse leakage current V = V A R RRM R T = 125 C - 6 60 j T = 25 C - 0.94 1.08 j (2) T = 125 C I = 8 A V Forward voltage drop - 0.79 0.91 V F j F T = 150 C - 0.75 0.87 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.77 x I + 0.018 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses in a power diode Table 4. Dynamic electrical characteristics (T = 25C, unless otherwise specified) j Symbol Parameter Test conditions Min. Typ. Max. Unit I = 1.0 A, dI /dt = -50 A/s, V = 30 V - 35 F F R t Reverse recovery time ns rr I = 1.0 A, dI /dt = -100 A/s, V = 30 V - 17 22 F F R DS12467 - Rev 1 page 2/13