STTH802 Ultrafast recovery diode Datasheet - production data Description A K This device uses ST s 200 V planar Pt doping K K technology, and is especially suited for switching K mode base drive and transistor circuits. Packaged in TO-220AC, TO-220FPAC, DPAK, 2 and D PAK this device is intended for use in low A A voltage, high frequency inverters, freewheeling A K TO-220AC NC NC and polarity protection. 2 Table 1: Device summary D PAK Symbol Value K K I 8 A F(AV) NC VRRM 200 V NC A T (max.) 175 C j A A VF (typ.) 0.8 V K DPAK TO-220FPAC t (typ.) 17 ns rr Features Very low conduction losses Negligible switching losses Low forward and reverse recovery time High junction temperature ECOPACK 2 compliant component for DPAK and DPAK on demand Insulated package: TO-220FPAC Insulating voltage: 2000 V sine RMS August 2017 DocID12362 Rev 3 1/17 www.st.com This is information on a product in full production. Characteristics STTH802 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V I Forward rms current 16 A F(RMS) TO-220AC, DPAK, TC = 145 C 2 Average forward current D PAK IF(AV) 8 A = 0.5, square wave TO-220FPAC T = 125 C C Surge non repetitive I tp = 10 ms sinusoidal 100 A FSM forward current T Storage temperature range -65 to +175 C stg Tj Maximum operating junction temperature 175 C Table 3: Thermal parameter Symbol Parameter Max. value Unit 2 TO-220AC, DPAK, D PAK 3.2 Rth(j-c) Junction to case C/W TO-220FPAC 5.5 Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 6 j (1) IR Reverse leakage current VR = VRRM A Tj = 125 C - 6 60 T = 25 C - 0.95 1.05 j (2) VF Forward voltage drop IF = 8 A V Tj = 150 C - 0.80 0.90 Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.73 x I + 0.021 x I F(AV) F (RMS) 2/17 DocID12362 Rev 3