VS-30CTH02SHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Hyperfast recovery time Base Common Low forward voltage drop Cathode 2 Low leakage current 175 C operating junction temperature 2 2 Meets MSL level 1, per J-STD-020, LF maximum Common 3 peak of 245 C Cathode 1 3 1 Anode Anode AEC-Q101 qualified, class 1 whisker test 2 D PAK (TO-263AB) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS Vishay Semiconductors 200 V series are the state of the art PRIMARY CHARACTERISTICS hyperfast recovery rectifiers designed with 2 Package D PAK (TO-263AB) optimized performance of forward voltage drop and I 2 x 15 A hyperfast recovery time. F(AV) The planar structure and the platinum doped life V 200 V R time control, guarantee the best overall V at I 0.78 V F F performance, ruggedness and reliability characteristics. t typ. 30 ns rr These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as T max. 175 C J freewheeling diode in low voltage inverters and chopper Circuit configuration Common cathode motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Peak repetitive reverse voltage V 200 V RRM per diode T = 159 C 15 C Average rectified forward current I F(AV) per device 30 A Non-repetitive peak surge current I T = 25 C 200 FSM C Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , V I = 100 A 200 - - V BR R R blocking voltage I = 15 A - 0.92 1.05 F Forward voltage V V F I = 15 A, T = 125 C - 0.78 0.85 F J V = V rated - - 10 R R Reverse leakage current I A R T = 125 C, V = V rated - 5 300 J R R Junction capacitance C V = 200 V - 57 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 13-Mar-18 Document Number: 96522 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30CTH02SHM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - - 30 F F R Reverse recovery time t T = 25 C -26 - ns rr J I = 15 A F T = 125 C - 40 - J dI /dt = 200 A/s F T = 25 C - 2.8 - J V = 160 V R Peak recovery current I A RRM T = 125 C - 6.0 - J T = 25 C - 37 - J Reverse recovery charge Q nC rr T = 125 C - 120 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLMIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -55 - 175 C J Stg Thermal resistance, junction to case per diode R -- 1.1 C/W thJC -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Marking device Case style D PAK (TO-263AB) 30CTH02SH Revision: 13-Mar-18 Document Number: 96522 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000