VS-30CTQ035-M3, VS-30CTQ040-M3, VS-30CTQ045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A FEATURES Base 2 common 175 C T operation J cathode Very low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength Anode 2 Anode and moisture resistance 13Common 3L TO-220AB cathode Guard ring for enhanced ruggedness and long term reliability PRIMARY CHARACTERISTICS Designed and qualified according to JEDEC -JESD 47 I 2 x 15 A Material categorization: for definitions of compliance F(AV) please see www.vishay.com/doc 99912 V 35 V, 40 V, 45 V R V at I 0.56 V F F DESCRIPTION I max. 15 mA at 125 C RM The VS-30CTQ... center tap Schottky rectifier has been T max. 175 C J optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for E 20 mJ AS reliable operation up to 175 C junction temperature. Typical Package 3L TO-220AB applications are in switching power supplies, converters, Circuit configuration Common cathode freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 30 A F(AV) V 35 to 45 V RRM I t = 5 s sine 1060 A FSM p V 15 A , T = 125 C (per leg) 0.56 V F pk J T -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-30CTQ035-M3 VS-30CTQ040-M3 VS-30CTQ045-M3 UNITS Maximum DC reverse voltage V R 35 40 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 127 C, rectangular waveform 30 F(AV) C See fig. 5 A Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse 1060 Following any rated load surge current per leg I condition and with rated FSM 10 ms sine or 6 ms rect. pulse V applied 265 RRM See fig. 7 Non-repetitive avalanche energy per leg E T = 25 C, I = 3.0 A, L = 4.40 mH 20 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 3.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 17-Aug-17 Document Number: 96275 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-30CTQ035-M3, VS-30CTQ040-M3, VS-30CTQ045-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 15 A 0.62 T = 25 C J 30 A 0.76 Maximum forward voltage drop per leg (1) V V FM See fig. 1 15 A 0.56 T = 125 C J 30 A 0.70 T = 25 C 2 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 15 J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 900 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +175 C J Stg temperature range Maximum thermal resistance, DC operation 3.25 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 1.63 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2.0 g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 30CTQ035 Marking device Case style 3L TO-220AB 30CTQ040 30CTQ045 Revision: 17-Aug-17 Document Number: 96275 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000