VS-UFL330FA60 www.vishay.com Vishay Semiconductors Insulated Ultra Fast Rectifier Module, 330 A FEATURES Gen 4 FRED Pt dices technology Two fully independent diodes Fully insulated package Ultrafast, soft reverse recovery, with high operation junction temperature (T max. = 175 C) J Low forward voltage drop Optimized for power conversion: welding and industrial SMPS applications Easy to use and parallel Industry standard outline SOT-227 UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS V 600 V R The VS-UFL330FA60 insulated modules integrate two state I per module at T = 107 C 330 A of the art ultrafast recovery rectifiers in the compact, F(AV) C industry standard SOT-227 package. t 98 ns rr Gen 4 FRED technology, state of the art, ultra low V , soft F Type Modules - Diode FRED Pt switching optimized for IGBT F/W diode. Package SOT-227 The minimized conduction loss, optimized storage charge, Two separate diodes, and low recovery current minimized the switching losses Circuit configuration parallel pin-out and reduce the over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V 600 V R Continuous forward current per diode I T = 90 C 243 F C A Single pulse forward current per diode I T = 25 C, 10 ms sine or 6 ms rectangular pulse 1130 FSM C Maximum power dissipation per module P T = 90 C 773 W D C RMS isolation voltage V Any terminal to case, t = 1 minute 2500 V ISOL Operating junction and storage temperatures T , T -55 to +175 C J Stg Revision: 13-Apr-18 Document Number: 96016 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-UFL330FA60 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage V I = 500 A 600 - - BR R I = 200 A - 1.43 1.65 F V Forward voltage V I = 200 A, T = 125 C - 1.29 - FM F J = 200 A, T = 175 C - 1.22 - I F J V = 600 V - 0.3 150 R A Reverse leakage current I T = 125 C, V = 600 V - 222 - RM J R T = 175 C, V = 600 V - 4.2 - mA J R Junction capacitance C V = 600 V, f = 1 MHz - 160 - pF T R DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS T = 25 C -98 - J Reverse recovery time t ns rr T = 125 C - 163 - J I = 50 A T = 25 C F - 17 - J Peak recovery current I dI /dt = 500 A/s A RRM F T = 125 C - 34 - J V = 200 V R T = 25 C - 825 - J Reverse recovery charge Q nC rr T = 125 C - 2788 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Junction to case, single leg conducting -- 0.22 R thJC Junction to case, both leg conducting - - 0.11 C/W Case to heatsink R Flat, greased surface - 0.1 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 Revision: 13-Apr-18 Document Number: 96016 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000