VS-UFL450CB60 www.vishay.com Vishay Semiconductors Not Insulated SOT-227 Power Module U-Series FRED Pt Gen 4, 600 V FEATURES Gen 4 FRED Pt dices technology Ultrasoft reverse recovery characteristics Low I and reverse recovery charge RRM Very low forward voltage drop Not insulated package 175 C operating junction temperature Optimized for power conversion: welding and industrial SMPS applications SOT-227 Plug-in compatible with other SOT-227 packages Easy to assemble Anode Anode Direct mounting to heatsink 1423 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION Base common cathode Gen 4 FRED technology, state of the art, ultra low V , soft F switching optimized for IGBT F/W diode. PRIMARY CHARACTERISTICS The minimized conduction loss, optimized storage charge V 600 V R and low recovery current minimized the switching losses (1) and reduce the over dissipation in the switching element I at T = 124 C per module 450 A F(AV) C and snubbers. t 97 ns rr Type Modules - Diode FRED Pt Package SOT-227 Circuit configuration Common cathode Note (1) All 4 anode terminals connected ABSOLUTE MAXIMUM RATINGS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V 600 V R Continuous forward current per diode I T = 133 C 250 F C A Single pulse forward current per diode I T = 25 C, 10 ms sine or 6 ms rectangular pulse 1170 FSM C Maximum power dissipation per module P T = 135 C 727 W D C Operating junction and storage temperatures T , T -55 to +175 C J Stg Revision: 13-Apr-18 Document Number: 95641 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-UFL450CB60 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage V I = 500 A 600 - - BR R I = 100 A - 1.18 1.32 F I = 100 A, T = 125 C - 1.00 - F J I = 100 A, T = 175 C - 0.91 - V F J Forward voltage, per leg V FM I = 200 A - 1.34 1.60 F I = 200 A, T = 125 C - 1.19 - F J I = 200 A, T = 175 C - 1.11 - F J V = V = 600 V, - 0.2 150 R R A Reverse leakage current, per leg I V = V = 600 V, T = 125 C - 169 - RM R R J V = V = 600 V, T = 175 C - 2.1 - mA R R J Junction capacitance, per leg C V = 600 V, f = 1 MHz - 173 - pF T R DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS T = 25 C -97- J Reverse recovery time, per leg t ns rr T = 125 C - 164 - J I = 50 A F T = 25 C - 16 - J Peak recovery current, per leg I dI /dt = 500 A/s A RRM F T = 125 C - 33 - J V = 200 V R T = 25 C - 794 - J Reverse recovery charge, per leg Q nC rr T = 125 C - 2736 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Junction to case, single leg conducting -- 0.11 R thJC Junction to case, both leg conducting - - 0.055 C/W Case to heatsink, per module R Flat, greased surface - 0.1 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf. in) Mounting torque Torque to heatsink - - 1.3 (11.5) Nm (lbf. in) Case style SOT-227 Revision: 13-Apr-18 Document Number: 95641 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000