VS-90EPS16L-M3, VS-90APS16L-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 90 A FEATURES Very low forward voltage drop Glass passivated pellet chip junction 2 Designed and qualified according to 1 1 JEDEC -JESD 47 2 Material categorization: for definitions of compliance 3 3 please see www.vishay.com/doc 99912 TO-247AD 2L TO-247AD 3L Base Base cathode APPLICATIONS cathode 2 + 2 Input rectification for single and three phase bridge configurations Off-board EV/HEV battery chargers Renewable energy inverters Input rectification for single and three phase bridge 13 --13 configurations Cathode Anode Anode Anode VS-90EPS16L-M3 VS-90APS16L-M3 Vishay Semiconductors switches and output rectifiers which are available in identical package outlines PRIMARY CHARACTERISTICS DESCRIPTION I 90 A F(AV) High voltage rectifiers optimized for very low forward V 1600 V R voltage drop with moderate leakage. V at I 1.21 V F F These devices are intended for use in main rectification I 1100 A FSM (single or three phase bridge) T max. 150 C J Package TO-247AD 2L, TO-247AD 3L Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 90 A F(AV) V 1600 V RRM I 1100 A FSM V 90 A, T = 25 C 1.21 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-90EPS16L-M3, VS-90APS16L-M3 1600 1700 1.5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 110 C, 180 conduction half sine wave 90 F(AV) C 10 ms sine pulse, rated V applied 915 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 1100 10 ms sine pulse, rated V applied 4185 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 6050 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 60 500 A s Revision: 10-Jul-2018 Document Number: 95696 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-90EPS16L-M3, VS-90APS16L-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 90 A, T = 25 C 1.21 V FM J Forward slope resistance r 3.17 m t T = 150 C J Threshold voltage V 0.73 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.2 thJC junction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.25 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Case style TO-247AD 2L 90EPS16L Marking device Case style TO-247AD 3L 90APS16L 150 150 R (DC) = 0.2 C/W R (DC) = 0.2 C/W thJC thJC 140 140 Conduction angle Conduction angle 130 130 120 120 30 30 60 110 110 60 90 90 100 100 120 120 180 180 DC 90 90 0 20406080 100 120 140 160 0 20406080 100 Average On-State Current (A) Average On-State Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 10-Jul-2018 Document Number: 95696 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C)