VS-95PF(R)...(W) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, Generation 2 DO-5 (DO-203AB) (Stud Version), 95 A FEATURES 95PF(R)... 95PF(R)...W High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Wire version available Low thermal resistance Designed and qualified for multiple level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DO-5 (DO-203AB) DO-5 (DO-203AB) TYPICAL APPLICATIONS Battery charges PRIMARY CHARACTERISTICS Converters I 95 A F(AV) Power supplies Package DO-5 (DO-203AB) Machine tool controls Circuit configuration Single Welding MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 95 A I F(AV) T 140 C C I 149 A F(RMS) 50 Hz 2000 I A FSM 60 Hz 2090 50 Hz 20 000 2 2 I t A s 60 Hz 18 180 V Range 400 to 1200 V RRM T -55 to +180 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = 150 C J CODE V V mA 40 400 500 VS-95PF(R)...(W) 80 800 960 9 120 1200 1440 Revision: 11-Jan-18 Document Number: 93532 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-95PF(R)...(W) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 80 A Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 140 C Maximum RMS forward current I 149 A F(RMS) t = 10 ms 2000 No voltage reapplied t = 8.3 ms 2090 Maximum peak, one-cycle forward, I A FSM non-repetitive surge current t = 10 ms 1680 100 % V RRM reapplied t = 8.3 ms 1760 Sinusoidal half wave, initial T = 150 C t = 10 ms J 20 000 No voltage reapplied t = 8.3 ms 18 180 2 2 2 Maximum I t for fusing I t A s t = 10 ms 14 100 100 % V RRM reapplied t = 8.3 ms 12 800 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 200 000 A s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.73 V F(TO) F(AV) F(AV) J J Low level value of forward r (16.7 % x x I < I < x I ), T = T maximum 3.0 m f F(AV) F(AV) J J slope resistance Maximum forward voltage drop V I = 267 A, T = 25 C, t = 400 s rectangular wave 1.40 V FM pk J p THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating and T , T -55 to +180 C J Stg storage temperature range Maximum thermal resistance, R DC operation 0.27 thJC junction to case K/W Maximum thermal resistance, R Mounting surface, smooth, flat and greased 0.25 thCS case to heatsink 3.4 (1) Not lubricated threads, tighting on nut (30) 2.3 (1) Lubricated threads, tighting on nut (20) Maximum allowable mounting N m torque (+0 %, -10 %) (lbf in) 4.2 (2) Not lubricated threads, tighting on Hexagon (37) 3.2 (2) Lubricated threads, tighting on Hexagon (28) 15.8 g Approximate weight 0.56 oz. Case style See dimensions - link at the end of datasheet DO-5 (DO-203AB) Notes (1) Recommended for pass-through holes (2) Torque must be applicable only to Hexagon and not to plastic structure, recommended for holed heatsink R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.14 0.10 120 0.16 0.17 90 0.21 0.22 T = T maximum K/W J J 60 0.30 0.31 30 0.50 0.50 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 11-Jan-18 Document Number: 93532 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000