VS-APU3006-F3, VS-APU3006-N3, VS-EPU3006-F3, VS-EPU3006-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt FEATURES Low forward voltage drop Ultrafast recovery time 175 C operating junction temperature Designed and qualified according to TO-247AC TO-247AC modified JEDEC -JESD 47 Base cathode Base cathode Material categorization: 4, 2 2 for definitions of compliance please see Available www.vishay.com/doc 99912 1 3 13 DESCRIPTION Anode Anode Cathode Anode Ultralow V , soft-switching ultrafast rectifiers optimized for F VS-APU3006-F3 VS-EPU3006-F3 Discontinuous (Critical) Mode (DCM) Power Factor VS-APU3006-N3 VS-EPU3006-N3 Correction (PFC). The minimized conduction loss, optimized stored charge PRODUCT SUMMARY and low recovery current minimized the switching losses and reduce over dissipation in the switching element and TO-247AC, TO-247AC modified Package snubbers. (2 pins) The device is also intended for use as a freewheeling diode I 30 A F(AV) in power supplies and other power switching applications. V 600 V R V at I 1.15 V F F APPLICATIONS t typ. 30 ns rr AC/DC SMPS 70 W to 400 W T max. 175 C J e.g. laptop and printer AC adaptors, desktop PC, TV and Diode variation Single die monitor, games units, and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current I T = 127 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C 220 FSM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 1.4 2 F Forward voltage V F I = 30 A, T = 150 C - 1.15 1.35 F J V = V rated - - 30 R R Reverse leakage current I A R T = 150 C, V = V rated - - 250 J R R Junction capacitance C V = 600 V - 20 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 08-Jul-15 Document Number: 93570 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-APU3006-F3, VS-APU3006-N3, VS-EPU3006-F3, VS-EPU3006-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 30 45 F F R Reverse recovery time t T = 25 C -45 - ns rr J T = 125 C - 100 - J I = 30 A F T = 25 C - 5.6 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 10 - J V = 200 V R T = 25 C - 127 - J Reverse recovery charge Q nC rr T = 125 C - 580 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -0.71.1C/W thJC junction to case Thermal resistance, R Typical socket mount - - 70 thJA junction to ambient per leg Thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case to heatsink -2.0 - g Weight -0.07 - oz. 1.2 2.4 kgf cm Mounting torque - (10) (20) (lbf in) Case style TO-247AC APU3006 Marking device Case style TO-247AC modified EPU3006 Revision: 08-Jul-15 Document Number: 93570 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000