VS-APH3006-F3, VS-APH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Low forward voltage drop Hyperfast soft recovery time 175 C operating junction temperature Designed and qualified according to 3 3 JEDEC -JESD 47 Available 2 2 1 1 Material categorization: for definitions of compliance TO-247AC TO-247AC modied please see www.vishay.com/doc 99912 Base cathode Base cathode 4, 2 2 DESCRIPTION / APPLICATIONS Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery 1 3 13 time, and soft recovery. Anode Cathode Anode Anode The planar structure and the platinum doped life time control VS-APH3006-F3 VS-EPH3006-F3 guarantee the best overall performance, ruggedness and VS-APH3006-N3 VS-EPH3006-N3 reliability characteristics. These devices are intended for use in PFC Boost stage in PRIMARY CHARACTERISTICS the AC/DC section of SMPS, inverters or as freewheeling I 30 A F(AV) diodes. V 600 V R The extremely optimized stored charge and low recovery V at I 1.4 V F F current minimize the switching losses and reduce over t typ. 27 ns rr dissipation in the switching element and snubbers. T max. 175 C J Package TO-247AC, TO-247AC modified (2 pins) Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current I T = 112 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C 220 FSM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 2.0 2.65 F Forward voltage V F I = 30 A, T = 150 C - 1.4 1.8 F J V = V rated - - 30 R R Reverse leakage current I A R T = 150 C, V = V rated - - 300 J R R Junction capacitance C V = 600 V - 20 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 10-Dec-2018 Document Number: 93571 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-APH3006-F3, VS-APH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 26 35 F F R Reverse recovery time t T = 25 C -26 - ns rr J T = 125 C - 70 - J I = 30 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7.6 - J V = 200 V R T = 25 C - 50 - J Reverse recovery charge Q nC rr T = 125 C - 280 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -0.71.1C/W thJC junction to case Thermal resistance, R Typical socket mount - - 70 thJA junction to ambient per leg Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.5 - thCS case to heatsink -5.5 - g Weight -0.2 - oz. 1.2 2.4 kgf cm Mounting torque - (10) (20) (lbf in) Case style TO-247AC APH3006 Marking device Case style TO-247AC modified (2 pins) EPH3006 Revision: 10-Dec-2018 Document Number: 93571 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000