VS-ETH1506SHM3, VS-ETH1506-1HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES Available Hyperfast recovery time Low forward voltage drop 175 C operating junction temperature Low leakage current AEC-Q101 qualified, meets JESD 201 class 1A 2 TO-263AB (D PAK) TO-262AA whisker test Base Meets MSL level 1, per J-STD-020, cathode LF maximum peak of 260 C 2 2 Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 3 1 3 1 N/C Anode N/C Anode DESCRIPTION / APPLICATIONS VS-ETH1506S-M3 VS-ETH1506-1-M3 Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. PRODUCT SUMMARY The planar structure and the platinum doped life time control 2 Package TO-263AB (D PAK), TO-262AA guarantee the best overall performance, ruggedness and I 15 A F(AV) reliability characteristics. V 600 V R These devices are intended for use in PFC Boost stage in the AC/DC section of SMPS, inverters or as freewheeling V at I 1.25 V F F diodes. t (typ.) 21 ns rr The extremely optimized stored charge and low recovery T max. 175 C J current minimize the switching losses and reduce over Diode variation Single die dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current I T = 139 C 15 F(AV) C A Non-repetitive peak surge current I T = 25 C 160 FSM C Operating junction and storage T , T -65 to +175 C J Stg temperatures ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 15A - 1.8 2.45 F Forward voltage V F I = 15 A, T = 150 C - 1.25 1.6 F J V = V rated - 0.01 15 R R Reverse leakage current I A R T = 150 C, V = V rated - 20 200 J R R Junction capacitance C V = 600 V - 12 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 10-Jul-15 Document Number: 94482 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ETH1506SHM3, VS-ETH1506-1HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 21 26 F F R I = 1.5 A, dI /dt = 100 A/s, V = 30 V - 25 36 F F R Reverse recovery time t ns rr T = 25 C -29 - J T = 125 C - 65 - J I = 15 A F T = 25 C - 3.9 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7.0 - J V = 390 V R T = 25 C - 60 - J Reverse recovery charge Q nC rr T = 125 C - 240 - J Reverse recovery time t -42 - ns rr I = 15 A F Peak recovery current I T = 125 C dI /dt = 800 A/s -21 - A RRM J F V = 390 V R Reverse recovery charge Q - 480 - nC rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.31.51C/W thJC junction to case Thermal resistance, R Typical socket mount - - 70 thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth and R -0.5 - thCS case to heatsink greased -2.0 - g Weight -0.07- oz. 6 12 kgf cm Mounting torque - (5) (10) (lbf in) 2 PAK) ETH1506SH Case style TO-263AB (D Marking device Case style TO-262 ETH1506-1H 100 1000 175 C 100 T = 175 C J 150 C 10 125 C 1 100 C 10 75 C 0.1 50 C T = 150 C J 0.01 25 C T = 25 C 0.001 J 1 0.0001 0 100 200 300 400 500 600 0.5 1.0 1.5 2.0 2.5 3.0 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 10-Jul-15 Document Number: 94482 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R