New Product VS-ETH3006S-M3, VS-ETH3006-1-M3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop 175 C operating junction temperature Low leakage current VS-ETH3006S-M3 VS-ETH3006-1-M3 Compliant to RoHS Directive 2002/95/EC Base Halogen-free according to IEC 61249-2-21 cathode definition 2 2 Designed and qualified according to JEDEC-JESD47 DESCRIPTION/APPLICATIONS 3 1 3 1 Hyperfast recovery rectifiers designed with optimized N/C Anode N/C Anode performance of forward voltage drop, hyperfast recovery 2 D PAK TO-262 time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY These devices are intended for use in PFC Boost stage in 2 Package TO-263AB (D PAK), TO-262AA the AC/DC section of SMPS, inverters or as freewheeling I 30 A F(AV) diodes. V 600 V R The extremely optimized stored charge and low recovery V at I 2.65 V F F current minimize the switching losses and reduce over t (typ.) 27 ns rr dissipation in the switching element and snubbers. T max. 175 C J Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current I T = 95 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C 180 FSM C Operating junction and storage T , T - 65 to 175 C J Stg temperatures ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 2.0 2.65 F Forward voltage V F I = 30 A, T = 150 C - 1.4 1.8 F J V = V rated - 0.02 30 R R Reverse leakage current I A R T = 150 C, V = V rated - 50 300 J R R Junction capacitance C V = 600 V - 20 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Document Number: 93574 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 21-Apr-11 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product VS-ETH3006S-M3, VS-ETH3006-1-M3 Hyperfast Rectifier, 30 A FRED Pt Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 26 35 F F R Reverse recovery time t T = 25 C -26 - ns rr J T = 125 C - 70 - J I = 30 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7.6 - J V = 200 V R T = 25 C - 50 - J Reverse recovery charge Q nC rr T = 125 C - 280 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T - 65 - 175 C J Stg temperature range Thermal resistance, R -0.951.4C/W thJC junction to case Thermal resistance, R Typical socket mount - - 70 thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth and R -0.5 - thCS case to heatsink greased -2.0 - g Weight -0.07 - oz. 6 12 kgf cm Mounting torque - (5) (10) (lbf in) 2 Case style D PAK modified ETH3006S Marking device Case style TO-262 ETH3006-1 www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93574 2 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Revision: 21-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000