VS-ETH3007-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Base cathode Hyper fast and soft recovery 22 2 Low forward voltage drop 175 C operating junction temperature Low leakage current 1 True 2 pin package 1 3 33 Designed and qualified according to JEDEC -JESD 47 Cathode Anode 2L TO-220AC Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS I 30 A Ultra low V , soft-switching hyper fast rectifiers optimized F(AV) F for discontinuous (critical) mode (DCM) power factor V 650 V R correction (PFC). V at I 1.4 V F F The minimized conduction loss, optimized stored charge t typ. 33 ns rr and low recovery current minimized the switching losses and reduce over dissipation in the switching element and T max. 175 C J snubbers. Package 2L TO-220AC The device is also intended for use as a freewheeling diode Circuit configuration Single in power supplies and other power switching applications. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Repetitive peak reverse voltage V 650 V RRM Average rectified forward current I T = 120 C 30 F(AV) C A Non-repetitive peak surge current I T = 25 C 210 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 650 - - R blocking voltage V R V I = 30 A - 1.8 2.1 F Forward voltage V F I = 30 A, T = 150 C - 1.4 1.6 F J V = V rated - 0.02 30 R R Reverse leakage current I A R T = 150 C, V = V rated - 50 300 J R R Junction capacitance C V = 650 V - 22 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 06-Apr-18 Document Number: 96063 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-ETH3007-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A F T = 25 C dI /dt = 100 A/s -37 - J F V = 30 V R Reverse recovery time t ns rr T = 25 C -33 - J T = 125 C - 88 - J I = 30 A F T = 25 C - 18 - J Peak recovery current I dI /dt = 1000 A/s A RRM F T = 125 C - 30 - J V = 400 V R T = 25 C - 450 - J Reverse recovery charge Q nC rr T = 125 C - 1350 - J THERMAL - MECHANICAL SPECIFICATIONS (T = 25 C unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -55 - 175 C J Stg storage temperature range Thermal resistance, R -1.0 1.3 thJC junction to case Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth, R -- 0.5 thCS case to heatsink and greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style 2L TO-220AC ETH3007 100 1000 175 C 100 150 C 10 10 T = 175 C J 1 1 0.1 25 C 0.01 T = 150 C J T = 25 C J 0.1 0.001 0 0.5 1.01.5 2.02.5 0 100 200300 400500 600700 V - Forward Voltage Drop (V) V (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 06-Apr-18 Document Number: 96063 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I (A) RM