VS-EPU6006L-M3, VS-APU6006L-M3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop 175 C operating junction temperature 3 Designed and qualified according to 3 2 commercial qualification 1 1 Material categorization: TO-247 long lead 2-pins TO-247 long lead 3-pins for definitions of compliance please see Cathode to base Cathode to base www.vishay.com/doc 99912 2 2, 4 DESCRIPTION / APPLICATIONS VS-EPU60/VS-APU60... series are the state of the art ultrafast recovery rectifiers designed with optimized 1 3 1 3 performance of forward voltage drop and ultrafast recovery Cathode Anode Anode Anode time. VS-EPU6006L-M3 VS-APU6006L-M3 The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and PRODUCT SUMMARY reliability characteristics. TO-247 long lead 2 pins, These devices are intended for use in the output rectification Package TO-247 long lead 3 pins stage of SMPS, welding, UPS, DC/DC converters as well as I 60 A F(AV) freewheeling diodes in low voltage inverters and chopper motor drives. V 600 V R Their extremely optimized stored charge and low recovery V at I 1.05 V F F current minimize the switching losses and reduce over t typ. 32 ns rr dissipation in the switching element and snubbers. T max. 175 C J Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX.UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current in DC I T = 116 C 60 F(AV) C A Single pulse forward current I T = 25 C 600 FSM C Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R I = 60 A - 1.2 1.5 F V Forward voltage V I = 60 A, T = 125 C - 1.1 1.3 F F J I = 60 A, T = 175 C - 1.05 1.2 F J V = V rated - 0.2 30 R R Reverse leakage current I A R T = 150 C, V = V rated - - 200 J R R Junction capacitance C V = 600 V - 38 - pF T R Revision: 10-Jul-15 Document Number: 95713 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-EPU6006L-M3, VS-APU6006L-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 200 A/s, V = 30 V - 32 - F F R Reverse recovery time t T = 25 C - 110 - ns rr J T = 125 C - 200 - J I = 60 A F T = 25 C - 10 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 19 - J V = 200 V R T = 25 C - 530 - J Reverse recovery charge Q nC rr T = 125 C - 1900 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R --0.65 thJC junction to case Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth R -0.5 - thCS case to heatsink and greased -6 - g Weight -0.21 - oz. 6 1.2 kgf. cm Mounting torque - (5) (10) (lbf in) Case style TO-247 long lead 2 pins EPU6006L Marking device Case style TO-247 long lead 3 pins APU6006L Revision: 10-Jul-15 Document Number: 95713 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000