VS-ETF150Y65N www.vishay.com Vishay Semiconductors EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 150 A FEATURES Trench IGBT technology FRED Pt clamping diodes PressFit pins technology Exposed Al O substrate with low thermal resistance 2 3 Short circuit rated Square RBSOA Integrated thermistor Low internal inductances EMIPAK-2B Low switching loss (package example) PressFit pins locking technology. Patent US.263.820 B2 UL approved file E78996 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance Q1 to Q4 IGBT please see www.vishay.com/doc 99912 V 650 V CES V typical at I = 150 A 1.70 V CE(on) C DESCRIPTION I at T = 82 C 150 A C C VS-ETF150Y65N is an integrated solution for a multi level Speed 8 kHz to 30 kHz inverter stage in a single package. The EMIPAK 2B package Package EMIPAK 2B is easy to use thanks to the PressFit pins and the exposed Circuit configuration 3-levels half bridge inverter stage substrate provides improved thermal performance. The optimized layout also helps to minimize stray parameters, allowing for better EMI performance. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Operating junction temperature T 175 J C Storage temperature range T -40 to +150 Stg RMS isolation voltage V T = 25 C, all terminals shorted, f = 50 Hz, t = 1 s 3500 V ISOL J Q1 to Q4 IGBT Collector to emitter voltage V 650 CES V Gate to emitter voltage V 20 GES Pulsed collector current I 450 CM A Clamped inductive load current I 180 LM T = 25 C 201 C Continuous collector current I T = 60 C 171 A C C T = 60 C 77 SINK T = 25 C 600 C Power dissipation P W D T = 60 C 460 C D5 - D6 CLAMPING DIODE Repetitive peak reverse voltage V 650 V RRM Single pulse forward current I 10 ms sine or 6 ms rectangular pulse, T = 25 C 750 FSM J T = 25 C 161 C A Diode continuous forward current I T = 60 C 140 F C T = 60 C 74 SINK T = 25 C 319 C Power dissipation P W D T = 60 C 245 C PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and International patents. Revision: 03-May-2018 Document Number: 95989 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-ETF150Y65N www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS D1 - D2 - D3 - D4 AP DIODE Single pulse forward current I 10 ms sine or 6 ms rectangular pulse, T = 25 C 500 FSM J T = 25 C 102 C A Diode continuous forward current I T = 60 C 92 F C T = 60 C 57 SINK T = 25 C 238 C Power dissipation P W D T = 60 C 182 C Notes Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur (1) V = 325 V, V = 15 V, L = 500 H, R = 4.7 , T = 175 C CC GE g J ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q1 to Q4 IGBT Collector to emitter breakdown voltage BV V = 0 V, I = 100 A 650 - - CES GE C V = 15 V, I = 150 A - 1.70 2.17 GE C Collector to emitter voltage V V CE(on) V = 15 V, I = 150 A, T = 125 C - 1.95 - GE C J Gate threshold voltage V V = V , I = 5.0 mA 5.0 6.0 8.4 GE(th) CE GE C Temperature coefficient of threshold V /T V = V , I = 1.0 mA (25 C to 125 C) - -18 - mV/C GE(th) J CE GE C voltage Forward transconductance g V = 20 V, I = 150 A - 102 - S fe CE C Transfer characteristics V V = 20 V, I = 150 A - 10.2 - V GE CE C V = 0 V, V = 650 V - 0.1 100 GE CE Zero gate voltage collector current I A CES V = 0 V, V = 650 V, T = 125 C - 130 - GE CE J Gate to emitter leakage current I V = 20 V, V = 0 V - - 600 nA GES GE CE D5 - D6 CLAMPING DIODE Cathode to anode blocking voltage V I 500 A 650 - - BR R = I = 100 A - 1.64 2.2 V F Forward voltage drop V FM I = 100 A, T = 125 C - 1.35 - F J V = 650 V - 0.3 100 R Reverse leakage current I A RM V = 650 V, T = 125 C - 100 - R J D1 - D2 - D3 - D4 AP DIODE I = 100 A - 2.1 2.9 F Forward voltage drop V V FM I = 100 A, T = 125 C - 1.64 - F J SWITCHING CHARACTERISTICS (T = 25 C unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q1 to Q4 IGBT Total gate charge (turn-on) Q -310 - g I = 150 A C Gate to emitter charge (turn-on) Q V = 400 V -95 - nC ge CC V = 15 V Gate to collector charge (turn-on) Q GE -130 - gc Input capacitance C - 9900 - ies V = 0 V GE Output capacitance C V = 30 V -460 - pF oes CC f = 1 MHz Reverse transfer capacitance C -250 - res Revision: 03-May-2018 Document Number: 95989 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000