VS-ETF150Y65U www.vishay.com Vishay Semiconductors EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 150 A FEATURES Trench IGBT technology FRED Pt clamping diodes PressFit pins technology Exposed Al O substrate with low thermal resistance 2 3 Short circuit rated Square RBSOA Integrated thermistor Low internal inductances EMIPAK 2B (package example) Low switching loss UL approved file E78996 PRIMARY CHARACTERISTICS PressFit pins locking technology Q1 - Q4 IGBT STAGE PATENT(S): www.vishay.com/patents V 650 V CES Material categorization: for definitions of compliance V typical at I = 100 A 1.72 V please see www.vishay.com/doc 99912 CE(on) C Q2 - Q3 IGBT STAGE DESCRIPTION V 650 V CES VS-ETF150Y65U is an integrated solution for a multi level V typical at I = 150 A 1.75 V CE(on) C inverter stage in a single package. The EMIPAK 2B package I at T = 82 C 150 A C C is easy to use thanks to the PressFit pins and the exposed Speed 8 kHz to 30 kHz substrate provides improved thermal performance. The Package EMIPAK 2B optimized layout also helps to minimize stray parameters, Circuit configuration 3-levels half bridge inverter stage allowing for better EMI performance. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Operating junction temperature T 175 J C Storage temperature range T -40 to +150 Stg RMS isolation voltage V T = 25 C, all terminals shorted, f = 50 Hz, t = 1 s 3500 V ISOL J Q1 - Q4 IGBT Collector to emitter voltage V 650 CES V Gate to emitter voltage V 20 GES Pulsed collector current I 220 CM A (1) Clamped inductive load current I 220 LM T = 25 C 142 C Continuous collector current I T = 60 C 121 A C C T = 60 C 64 SINK T = 25 C 417 C Power dissipation P W D = 60 C 319 T C PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and International patents. Revision: 06-Oct-17 Document Number: 95706 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-ETF150Y65U www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Q2 - Q3 IGBT Collector to emitter voltage V 650 CES V Gate to emitter voltage V 20 GES Pulsed collector current I 300 CM A (1) Clamped inductive load current I 300 LM T = 25 C 201 C Continuous collector current I T = 60 C 171 A C C T = 60 C 77 SINK T = 25 C 600 C Power dissipation P W D T = 60 C 460 C D5 - D6 CLAMPING DIODE Repetitive peak reverse voltage V 650 V RRM Single pulse forward current I 10 ms sine or 6 ms rectangular pulse, T = 25 C 380 FSM J T = 25 C 95 C A Diode continuous forward current I T = 60 C 80 F C T = 60 C 45 SINK T = 25 C 221 C Power dissipation P W D T = 60 C 169 C D1 - D2 - D3 - D4 AP DIODE Single pulse forward current I 10 ms sine or 6 ms rectangular pulse, T = 25 C 250 FSM J T = 25 C 78 C A Diode continuous forward current I T = 60 C 66 F C T = 60 C 43 SINK T = 25 C 176 C Power dissipation P W D T = 60 C 135 C Notes Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur (1) V = 325 V, V = 15 V, L = 500 H, R = 4.7 , T = 175 C CC GE g J ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q1 - Q4 IGBT Collector to emitter breakdown voltage BV V = 0 V, I = 100 A 650 - - CES GE C V = 15 V, I = 100 A - 1.72 2.06 GE C Collector to emitter voltage V V CE(on) V = 15 V, I = 100 A, T = 125 C - 1.94 - GE C J Gate threshold voltage V V = V , I = 3.3 mA 5.0 6.3 8.4 GE(th) CE GE C Temperature coefficient of threshold V /T V = V , I = 1 mA (25 C to 125 C) - -19 - mV/C GE(th) J CE GE C voltage Forward transconductance g V = 20 V, I = 100 A - 71 - S fe CE C Transfer characteristics V V = 20 V, I = 100 A - 10.5 - V GE CE C V = 0 V, V = 650 V - 0.2 100 GE CE Zero gate voltage collector current I A CES V = 0 V, V = 650 V, T = 125 C - 60 - GE CE J Gate to emitter leakage current I V = 20 V, V = 0 V - - 600 nA GES GE CE Revision: 06-Oct-17 Document Number: 95706 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000