PD -91594C IRG4BC30KD-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C FeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control, V = 600V CES t =10s, 360V V (start), T = 125C, sc CE J V = 15V GE V = 2.21V CE(on) typ. Combines low conduction losses with high G switching speed tighter parameter distribution and higher efficiency V = 15V, I = 16A GE C E than previous generations TM n-channel IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery antiparallel diodes Benefits Latest generation 4 IGBTs offer highest power density motor controls possible TM HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristic reduce noise, EMI and switching losses This part replaces the IRGBC30KD2-S and IRGBC30MD2-S products 2 For hints see design tip 97003 D Pak Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 28 C C I T = 100C Continuous Collector Current 16 C C I Pulsed Collector Current 58 A CM I Clamped Inductive Load Current 58 LM I T = 100C Diode Continuous Forward Current 12 F C I Diode Maximum Forward Current 58 FM t Short Circuit Withstand Time 10 s sc V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 100 D C W P T = 100C Maximum Power Dissipation 42 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbf in (1.1 N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case - IGBT 1.2 JC R Junction-to-Case - Diode 2.5 JC R Case-to-Sink, Flat, Greased Surface 0.5 C/W CS R Junction-to-Ambient ( PCB Mounted,steady-state) 40 JA Wt Weight 1.44 g www.irf.com 1 4/24/2000IRG4BC30KD-S Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 VV = 0V, I = 250A (BR)CES GE C V / T Temperature Coeff. of Breakdown Voltage 0.54 V/CV = 0V, I = 1.0mA (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 2.21 2.7 I = 16A V = 15V CE(on) C GE 2.88 I = 28A See Fig. 2, 5 C V 2.36 I = 16A, T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V / T Temperature Coeff. of Threshold Voltage -12 mV/CV = V , I = 250A GE(th) J CE GE C g Forward Transconductance 5.4 8.1 SV = 100V, I = 16A fe CE C I Zero Gate Voltage Collector Current 250 V = 0V, V = 600V CES GE CE A 2500 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.4 1.7 I = 12A See Fig. 13 FM C V 1.3 1.6 I = 12A, T = 150C C J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 67 100 I = 16A g C Q Gate - Emitter Charge (turn-on) 11 16 nC V = 400V See Fig.8 ge CC Q Gate - Collector Charge (turn-on) 25 37 V = 15V gc GE t Turn-On Delay Time 60 d(on) t Rise Time 42 T = 25C r J ns t Turn-Off Delay Time 160 250 I = 16A, V = 480V d(off) C CC t Fall Time 80 120 V = 15V, R = 23 f GE G E Turn-On Switching Loss 0.60 Energy losses includetai on E Turn-Off Switching Loss 0.58 mJ and diode reverse recovery off E Total Switching Loss 1.18 1.6 See Fig. 9,10,14 ts t Short Circuit Withstand Time 10 s V = 360V, T = 125C sc CC J V = 15V, R = 10 , V < 500V GE G CPK t Turn-On Delay Time 58 T = 150C, See Fig. 11,14 d(on) J t Rise Time 42 I = 16A, V = 480V r C CC ns t Turn-Off Delay Time 210 V = 15V, R = 23 d(off) GE G t Fall Time 160 Energy losses includetai f E Total Switching Loss 1.69 mJ and diode reverse recovery ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 920 V = 0V ies GE C Output Capacitance 110 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 27 = 1.0MHz res t Diode Reverse Recovery Time 42 60 T = 25C See Fig. rr J ns 80 120 T = 125C 14 I = 12A J F I Diode Peak Reverse Recovery Current 3.5 6.0 T = 25C See Fig. rr J A 5.6 10 T = 125C 15 V = 200V J R Q Diode Reverse Recovery Charge 80 180 T = 25C See Fig. rr J nC 220 600 T = 125C 16 di/dt = 200As J di /dt Diode Peak Rate of Fall of Recovery 180 T = 25C See Fig. (rec)M J A/s During t 160 T = 125C 17 b J 2 www.irf.com