340356 Collector -0 /1 0 % ( / 0 % 2 3 4 3 0 5 3 ,0 21 2,64 R1 Gate R2 3 6 2,64 ( 3 1%7 % Emitter ) * +,./ - ) * +,, - ) * +,., & & ( ) * + , - 01/12 01/12 01/12 . / % % . + & & ( ( Absolute Maximum Ratings Parameter Max Unit Condition V ohm Collector-to-Emitter Voltage Clamped V RG = 1K CES I T = 25C Continuous Collector Current 20 A VGE = 5V C C I T = 110C V = 5V Continuous Collector Current 14 A GE C C I Continuous Gate Current 1 mA G I Peak Gate Current 10 mA t = 1ms, f = 100Hz Gp PK V Gate-to-Emitter Voltage Clamped V GE P T = 25C Maximum Power Dissipation 125 W D C P T = 110C Maximum Power Dissipation 54 W D T Operating Junction and - 40 to 175 C J T Storage Temperature Range - 40 to 175 C STG V Electrostatic Voltage 6 KV ohm ESD C = 100pF, R = 1.5K I Self-clamped Inductive Switching Current 11.5 A L = 4.7mH, T = 25C L Thermal Resistance Parameter MinTyp Max Unit R Thermal Resistance, Junction-to-Case 1.2 JC R Thermal Resistance, Junction-to-Ambient 40 C/W JA (PCB Mounted, Steady State) Z Transient Thermal Impedance, Juction-to-Case (Fig.11) JC (unless otherwise specified) Off-State Electrical Charasteristics T = 25C J Parameter Min Typ Max Unit Conditions Fig Collector-to-Emitter Breakdown Voltage 370 400 430 V BVCES R G = 1K ohm, I C=7A, VGE = 0V Gate-to-Emitter Breakdown Voltage 10 12 V BV I =2m A GES G Collector-to-Emitter Leakage Current 15 I A R =1K ohm, V = 250V CES G CE 100 A R =1K ohm, V = 250V, T =150C G CE J BV Emitter-to-Collector Breakdown Voltage 24 28 V I = -10m A CER C ohm R 1 Gate Series Resistance 75 Gate-to-Emitter Resistance 10 20 30 K ohm R 2 On-State Electrical Charasteristics T = 25C (unless otherwise specified) J Parameter Min Typ Max Unit Conditions Fig 1.2 1.40 I = 7A, V = 4.5V C GE V Collector-to-Emitter Saturation 1.35 1.55 V I = 10A, V = 4.5V 1 CE(on) C GE o Voltage 1.35 1.55 I = 10A, V = 4.5V, T = -40 C 2 C GE C o 1.5 1.7 I = 14A, V = 5.0V, T = -40 C 4 C GE C 1.55 1.75 I = 14A, V = 5.0V C GE o I = 14A, V = 5.0V, T =150 C 1.6 1.8 C GE C o VGE(th) Gate Threshold Voltage 1.3 1.8 2.2 V VCE = VGE, I C = 1 m A, TC=25 C 3, 5 o V = V , I = 1 m A, T =150 C 0.75 1.8 CE GE C C 8 o g V = 25V, I = 10A, T =25 C fs Transconductance 10 15 19 S CE C C I Collector Current 20 A V = 10V, V = 4.5V C CE GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min Typ Max Unit Conditions Fig Q Total Gate charge 27 I = 10A, V =12V, V =5V 7 g C CE GE Q Gate - Emitter Charge 2.5 nC I = 10A, V =12V, V =5V 15 ge C CE GE Q I = 10A, V =12V, V =5V gc Gate - Collector Charge 10 C CE GE t (on) Turn - on delay time 0.6 0.9 1.35 V =5V, R =1K ohm, L=1mH, V =14V 12 d GE G CE Rise time 1.6 2.8 4 t r s VGE=5V, RG=1K ohm, L=1mH, VCE=14V 14 Turn - off delay time 3.7 6 8.3 t (off) V =5V, R =1K ohm, L=1mH, V =300V d GE G CE C Input Capacitance 550 825 V =0V, V =25V, f=1M H z ies GE CE C Output Capacitance 100 150 pF V =0V, V =25V, f=1M H z 6 oes GE CE C V =0V, V =25V, f=1M H z res Reverse Transfer Capacitance 12 18 GE CE 25 L=0.7m H, T =25C C I Self-Clamped 15.5 A L=2.2m H, T =25C 9 L C Inductive Switching Current 11.5 L=4.7m H, T =25C 10 C 16.5 L=1.5m H, T =150C 13 C 7.5 L=4.7m H, T =150C 14 C L=8.7m H, T =150C 6 C o T =150 C, J t Short Circuit Withstand Time 120 s V = 16V, L = 10H 14 SC CC R = 1K ohm, V = 5V G GE