VS-EPU6006-N3, VS-APU6006-N3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop 1 1 175 C operating junction temperature 2 33 Designed and qualified according to 3 JEDEC -JESD 47 TO-247AC 2L TO-247AC 3L Material categorization: for definitions of compliance Cathode Cathode to base to base please see www.vishay.com/doc 99912 2 2 DESCRIPTION / APPLICATIONS VS-EPU60/VS-APU60... series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery 3 1 3 1 Cathode Anode Anode Anode time. VS-EPU6006-N3 VS-APU6006-N3 The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification PRIMARY CHARACTERISTICS stage of SMPS, welding, UPS, DC/DC converters as well as I 60 A F(AV) freewheeling diodes in low voltage inverters and chopper V 600 V R motor drives. V at I 1.05 V F F Their extremely optimized stored charge and low recovery t typ. 32 ns rr current minimize the switching losses and reduce over T max. 175 C J dissipation in the switching element and snubbers. Package TO-247AC 2L, TO-247AC 3L Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current in DC I T = 116 C 60 F(AV) C A Single pulse forward current I T = 25 C, t = 10 ms 600 FSM C p Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R I = 60 A - 1.2 1.5 F V Forward voltage V I = 60 A, T = 125 C - 1.1 1.3 F F J I = 60 A, T = 175 C - 1.05 1.2 F J V = V rated - - 30 R R Reverse leakage current I A R T = 150 C, V = V rated - - 200 J R R Junction capacitance C V = 600 V - 38 - pF T R Revision: 29-Nov-2019 Document Number: 94794 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-EPU6006-N3, VS-APU6006-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 200 A/s, V = 30 V - 32 43 F F R Reverse recovery time t T = 25 C - 110 - ns rr J T = 125 C - 200 - J I = 60 A T = 25 C F - 10 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 19 - J V = 200 V R T = 25 C - 530 - J Reverse recovery charge Q nC rr T = 125 C - 1900 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R --0.65 thJC junction to case Thermal resistance, R Typical socket mount - - 40 C/W thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth, R -0.5 - thCS case to heatsink and greased -6 - g Weight -0.21 - oz. 6 1.2 kgf. cm Mounting torque - (5) (10) (lbf in) Case style TO-247AC 2L EPU6006 Marking device Case style TO-247AC 3L APU6006 Revision: 29-Nov-2019 Document Number: 94794 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000