VS-8ETH06SPbF, VS-8ETH06-1PbF www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature 2 TO-263AB (D PAK) TO-262AA Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Base AEC-Q101 qualified cathode 2 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with 3 1 3 1 optimized performance of forward voltage drop, hyperfast N/C Anode N/C Anode recovery time, and soft recovery. VS-8ETH06SPbFVS-8ETH06-1PbF The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY These devices are intended for use in PFC boost stage in 2 Package TO-263AB (D PAK), TO-262AA the AC/DC section of SMPS, inverters or as freewheeling diodes. I 8 A F(AV) Their extremely optimized stored charge and low recovery V 600 V R current minimize the switching losses and reduce over V at I 1.3 V F F dissipation in the switching element and snubbers. t typ. 18 ns rr T max. 175 C J Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX.UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 144 C 8 F(AV) C Non-repetitive peak surge current I T = 25 C 90 A FSM J Peak repetitive forward current I 16 FM Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 8 A - 2.0 2.4 F Forward voltage V F I = 8 A, T = 150 C - 1.3 1.8 F J V = V rated - 0.3 50 R R Reverse leakage current I A R T = 150 C, V = V rated - 55 500 J R R Junction capacitance C V = 600 V - 17 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 10-Jul-15 Document Number: 94027 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-8ETH06SPbF, VS-8ETH06-1PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 18 22 F F R I = 8 A, dI /dt = 100 A/s, V = 30 V - 20 25 F F R Reverse recovery time t ns rr T = 25 C -25 - J = 125 C - 40 - T J I = 8 A F T = 25 C - 2.4 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.8 - J V = 390 V R T = 25 C - 25 - J Reverse recovery charge Q nC rr T = 125 C - 120 - J Reverse recovery time t -33 - ns rr I = 8 A F Peak recovery current I T = 125 C dI /dt = 600 A/s -12 - A RRM J F V = 390 V R Reverse recovery charge Q - 220 - nC rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.42 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth R -0.5 - thCS case to heatsink and greased -2.0 - g Weight -0.07 - oz. 12 kgf cm Mounting torque 6.0 (5.0) - (10) (lbf in) 2 PAK) 8ETH06S Case style TO-263AB (D Marking device Case style TO-262AA 8ETH06-1 Revision: 10-Jul-15 Document Number: 94027 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000