VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
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Vishay Semiconductors
Ultralow V Hyperfast Rectifier for Discontinuous Mode PFC,
F
8 A FRED Pt
FEATURES
Hyperfast recovery time
Benchmark ultralow forward voltage drop
2
2
175 C operating junction temperature
3
3 Low leakage current
1
1
Fully isolated package (V = 2500 V )
INS RMS
TO-220 FULL-PAK
TO-220AC
UL E78996 approved
Base Base
cathode
cathode
Designed and qualified according to
2 Available
2
JEDEC -JESD 47
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1 3 1 3
DESCRIPTION
Cathode Anode Cathode Anode
State of the art, ultralow V , soft-switching hyperfast
F
VS-8ETL06PbF VS-8ETL06FPPbF
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
VS-8ETL06-N3 VS-8ETL06FP-N3
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
PRODUCT SUMMARY
reduce over dissipation in the switching element and
Package TO-220AC, TO-220FP
snubbers.
I 8 A
F(AV)
The device is also intended for use as a freewheeling diode
V 600 V
R
in power supplies and other power switching applications.
V at I 0.81 V
F F
t typ. 60 ns
rr
APPLICATIONS
T max. 175 C
J
AC/DC SMPS 70 W to 400 W
Diode variation Single die
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS
Repetitive peak reverse voltage V 600 V
RRM
T = 160 C
C
Average rectified forward current I 8
F(AV)
FULL-PAK T = 142 C
C
A
Non-repetitive peak surge current I T = 25 C 175
FSM J
Repetitive peak forward current I 16
FM
Operating junction and storage temperatures T , T -65 to +175 C
J Stg
ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, V ,
BR
I = 100 A 600 - -
R
blocking voltage V
R
V
I = 8 A - 0.96 1.05
F
Forward voltage V
F
I = 8 A, T = 150 C - 0.81 0.86
F J
V = V rated - 0.05 5
R R
Reverse leakage current I A
R
T = 150 C, V = V rated - 20 100
J R R
Junction capacitance C V = 600 V - 17 - pF
T R
Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH
S
Revision: 15-Nov-16 Document Number: 94028
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified)
C
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
I = 1 A, dI /dt = 100 A/s, V = 30 V - 60 100
F F R
I = 8 A, dI /dt = 100 A/s, V = 30 V - 150 250
F F R
Reverse recovery time t ns
rr
T = 25 C - 170 -
J
T = 125 C - 250 -
J
I = 8 A
F
T = 25 C - 15 -
J
Peak recovery current I dI /dt = 200 A/s A
RRM F
T = 125 C - 20 -
J
V = 390 V
R
T = 25 C - 1.3 -
J
Reverse recovery charge Q C
rr
T = 125 C - 2.6 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS
Maximum junction and storage
T , T -65 - 175 C
J Stg
temperature range
-1.4 2
Thermal resistance,
R
thJC
junction to case
(FULL-PAK) - 3.4 4.3
Thermal resistance,
C/W
R Typical socket mount - - 70
thJA
junction to ambient per leg
Thermal resistance, Mounting surface, flat, smooth
R -0.5 -
thCS
case to heatsink and greased
-2.0 - g
Weight
-0.07 - oz.
6.0 12 kgf cm
Mounting torque -
(5.0) (10) (lbf in)
Case style TO-220AC 8ETL06
Marking device
Case style TO-220 FULL-PAK 8ETL06FP
Revision: 15-Nov-16 Document Number: 94028
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000