DB2130200L Panasonic

Doc No. TT4-EA-12791 Revision. 2 Product Standards Schottky Barrier Diode DB2130200L DB2130200L Silicon epitaxial planar type Unit: mm 1.25 0.12 For rectification 0.6 2 Features Low forward voltage VF Forward current (Average) IF(AV) = 1 A rectification is possible Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: B3 0.8 0.55 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic SMini2-F4-B-B JEITA SC-108A Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 30 V Internal Connection Maximum peak reverse voltage VRM 30 V 2 *1 IF(AV) 1 A Forward current (Average) *2 IFSM 20 A Non-repetitive peak forward surge current Junction temperature Tj 125 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +125 C Note: *1 For embedded alumina substrate (substrate size:5 cm 5 cm) 1 *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) Page 1of 4 Established : 2010-12-03 Revised : 2013-04-19 1.9 2.5Doc No. TT4-EA-12791 Revision. 2 Product Standards Schottky Barrier Diode DB2130200L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit VF1 IF = 0.7 A 0.36 Forward voltage V VF2 IF = 1.0 A 0.38 Reverse current IR VR = 30 V 1200 A Terminal capacitance Ct VR = 10 V, f = 1 MHz 48 pF IF = IR = 100 mA *1 trr 18 ns Reverse recovery time Irr = 10 mA, RL = 100 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t p r t 10% t rr I F t A 90% V R I = 10 mA rr t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 R = 100 L (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2 of 4 Established : 2010-12-03 Revised : 2013-04-19