DB2141300L Panasonic

Doc No. TT4-EA-11458 Revision. 2 Product Standards Schottky Barrier Diode DB2141300L DB2141300L Silicon epitaxial planar type Unit: mm 1.25 0.12 For rectification 0.6 2 Features Low forward voltage and small reverse leakage current Forward current (Average) IF(AV) = 2 A rectification is possible Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: 4N 0.8 0.55 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic SMini2-F4-B-B JEITA SC-108A Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage (direct current) VR 40 V Internal Connection *1 IF(AV) 2.0 A Forward current (average) 2 *2 IFSM 30 A Non-repetitive peak forward surge current *1 Tj 150 C Junction temperature Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C Note: *1 Tl = 80 C *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) 1 Page 1of 4 Established : 2009-08-17 Revised : 2013-04-19 1.9 2.5Doc No. TT4-EA-11458 Revision. 2 Product Standards Schottky Barrier Diode DB2141300L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 2.0 A 0.46 0.53 V Reverse current IR VR = 40 V 25 150 A Terminal capacitance Ct VR = 10 V, f = 1 MHz 43 pF *1 trr IF = IR = 100 mA, Irr = 10 mA 12 ns Reverse recovery time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 10 mA rr t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA r R Pulse Generator Wave Form Analyzer = 0.05 (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2 of 4 Established : 2009-08-17 Revised : 2013-04-19