DB2J20600L Panasonic

Doc No. TT4-EA-13097 Revision. 2 Product Standards Schottky Barrier Diode DB2J20600L DB2J20600L Silicon epitaxial planar type Unit: mm For high frequency rectification 1.25 0.13 DB2X206 in SMini2 type package 0.35 2 Features Low forward voltage VF Small reverse leakage current Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: D3 0.5 0.7 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic SMini2-F5-B JEITA SC-90A Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 20 V Internal Connection Repetitive peak reverse voltage VRRM 20 V 2 *1 IF(AV) 1 A Forward current (Average) *2 IFSM 2A Non-repetitive peak forward surge current *1 Tj 150 C Junction temperature Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C Note: *1 Tl = 80 C 1 *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) Page 1of 4 Established : 2011-06-14 Revised : 2013-04-20 1.7 2.5Doc No. TT4-EA-13097 Revision. 2 Product Standards Schottky Barrier Diode DB2J20600L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 1.0 A 0.45 V Reverse current IR VR = 20 V 100 A Terminal capacitance Ct VR = 10 V, f = 1 MHz 20 pF *1 trr IF = IR = 100 mA, Irr = 0.1 IR 6 ns Reverse recovery time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 0.1 I rr R t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2 of 4 Established : 2011-06-14 Revised : 2013-04-20