DB2S31400L Panasonic

DB2S314 Silicon epitaxial planar type Unit: mm For high speed switching circuits DB2J314 in SSMini2 type package Features Small reverse current I R Short reverse recovery time t rr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: C6 Packaging DB2S31400L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 1: Cathode Absolute Maximum Ratings T = 25C a 2: Anode Parameter Symbol Rating Unit Panasonic SSMini2-F5-B Reverse voltage V 30 V R JEITA SC-79 Code SOD-523 Maximum peak reverse voltage V 30 V RM Forward current I 30 mA F Peak forward current I 150 mA FM Junction temperature T 125 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +125 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit V I = 1 mA 0.4 F1 F Forward voltage V V I = 30 mA 1.0 F2 F Reverse current I V = 30 V 300 nA R R Terminal capacitance C V = 10 V, f = 1 MHz 1.5 pF t R 1 * Reverse recovery time t I = I = 10 mA, I = 1 mA, R = 100 1.0 ns rr F R rr L Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 2 GHz 1: t measurement circuit * rr Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 1 mA rr t = 2 s I = 10 mA p F t = 0.35 ns I = 10 mA r R Pulse Generator Wave Form Analyzer = 0.05 R = 100 L (PG-10N) (SAS-8130) R = 50 R = 50 s i Publication date: April 2013 Ver. EED 1DB2S314 DB2S314 I -V DB2S314 Ct-VR DB2S314 I -V F F R R I V I V C V F F R R t R 1 4 10 10 5.0 T = 125C Pulse test a T = 25C 5 a 10 4.0 2 T = 125C 10 a 6 10 85C 25C 3.0 7 10 3 10 85C 8 10 2.0 25C 9 10 4 40C 10 40C 1.0 10 10 5 11 10 0 10 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 0 10 20 30 Reverse voltage V (V) Forward voltage V (V) Reverse voltage V (V) R F R Ver. EED 2 Forward current I (A) F Reverse current I (A) R Terminal capacitance C (pF) t