X-On Electronics has gained recognition as a prominent supplier of DB2J31000L Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. DB2J31000L Schottky Diodes & Rectifiers are a product manufactured by Panasonic. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

DB2J31000L Panasonic

DB2J31000L electronic component of Panasonic
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See Product Specifications
Part No.DB2J31000L
Manufacturer: Panasonic
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers SCHOTTKY BARRIER FLT LD 1.25x2.5mm
Datasheet: DB2J31000L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 1
3000 : USD 0.0702
6000 : USD 0.0617
15000 : USD 0.0536
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.038
9000 : USD 0.038
15000 : USD 0.038
30000 : USD 0.038
60000 : USD 0.038
N/A

Obsolete
0
MOQ : 30000
Multiples : 30000
30000 : USD 0.0373
N/A

Obsolete
0
MOQ : 30000
Multiples : 30000
30000 : USD 0.0376
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.7053
10 : USD 0.4582
100 : USD 0.118
500 : USD 0.0786
1000 : USD 0.0622
3000 : USD 0.0472
9000 : USD 0.0408
24000 : USD 0.039
45000 : USD 0.0338
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Recovery Time
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the DB2J31000L from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DB2J31000L and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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DB2J310 Silicon epitaxial planar type For high speed switching circuits Unit: mm Features Short reverse recovery time t rr Low forward voltage V F Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: B7 Packaging DB2J31000L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Reverse voltage V 30 V R 1: Cathode Repetitive peak reverse voltage V 30 V 2: Anode RRM Forward current (Average) I 200 mA F(AV) Panasonic SMini2-F5-B Peak forward current I 300 mA JEITA SC-90A FM 1 * Code Non-repetitive peak forward surge current I 1 A FSM Junction temperature T 125 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +125 C stg Note) 1: 50 Hz sine wave 1 cycle (Non-repetitive peak current) * Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit V I = 5 mA 0.27 F1 F Forward voltage V I = 100 mA 0.40 V F2 F V I = 200 mA 0.47 F3 F I V = 10 V 20 R1 R Reverse current A I V = 30 V 200 R2 R Terminal capacitance C V = 10 V, f = 1 MHz 4.5 pF t R 1 * Reverse recovery time t I = I = 100 mA, I = 10 mA, R = 100 1.6 ns rr F R rr L Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz 1: t measurement circuit * rr Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 10 mA rr t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 R = 100 (PG-10N) (SAS-8130) L R = 50 R = 50 s i Publication date: April 2013 Ver. DED 1DB2J310 DB2J310 I -V DB2J310 I -V DB2J310 Ct-VR F F R R I V I V C V F F R R t R 1 25 T = 125C Pulse test a T = 25C a 3 10 1 T = 125C 10 a 20 100C 100C 25C 85C 2 10 15 5 10 85C 3 10 10 40C 25C 7 10 4 10 5 40C 5 9 10 10 0 0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 0 5 10 15 20 25 30 Forward voltage V (V) Reverse voltage V (V) Reverse voltage V (V) F R R Ver. DED 2 Forward current I (A) F Reverse current I (A) R Terminal capacitance C (pF) t

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
PA4
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PAN
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PANASONIC / SUNX
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PB4
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