DB2J41100L Panasonic

Doc No. TT4-EA-11487 Revision. 2 Product Standards Schottky Barrier Diode DB2J41100L DB2J41100L Silicon epitaxial planar type Unit: mm 1.25 0.13 For rectification 0.35 2 Features Low forward voltage and low reverse leakage current Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: 4R 0.5 0.7 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic SMini2-F5-B JEITA SC-90A Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 40 V Internal Connection *1 IF(AV) 1 A Forward current (average) 2 *2 IFSM 3 A Non-repetitive peak forward surge current Junction temperature Tj 125 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +125 C Note: *1 For embedded alumina substrate (substrate size: 5 cm 5 cm) *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) 1 Page 1of 4 Established : 2009-10-09 Revised : 2013-04-20 1.7 2.5Doc No. TT4-EA-11487 Revision. 2 Product Standards Schottky Barrier Diode DB2J41100L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 1 A 0.50 0.58 V Reverse current IR VR = 40 V 15 100 A Terminal capacitance Ct VR = 10 V, f = 1 MHz 21 pF *1 trr IF = 100 mA, Irr = 0.1IR, RL = 100 6.8 ns Reverse recovery time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t p r t 10% t rr I F t A 90% V R I = 0.1 I rr R t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 R = 100 (PG-10N) (SAS-8130) L R = 50 R = 50 s i Page 2 of 4 Established : 2009-10-09 Revised : 2013-04-20