80SQ... Series Vishay High Power Products Schottky Rectifier, 8 A FEATURES 175 C T operation J Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for Cathode Anode enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability DO-204AR Lead (Pb)-free plating Designed and qualified for industrial level DESCRIPTION PRODUCT SUMMARY The 80SQ axial leaded Schottky rectifier series has been I 8 A F(AV) optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up V 30/35/40/45 V R to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 8 A F(AV) V Range 30 to 45 V RRM I t = 5 s sine 2400 A FSM p V 8 Apk, T = 125 C 0.44 V F J T Range - 55 to 175 C J VOLTAGE RATINGS PARAMETER SYMBOL 80SQ030 80SQ035 80SQ040 80SQ045 UNITS Maximum DC reverse voltage V R 30 35 40 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 119 C, rectangular waveform 8 F(AV) C See fig. 5 A Maximum peak one cycle Following any rated load 5 s sine or 3 s rect. pulse 2400 non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 380 See fig. 7 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1.6 A, L = 7.8 mH 10 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.6 A AR Frequency limited by, T maximum V = 1.5 x V typical J A R Document Number: 93398 For technical questions, contact: diodes-tech vishay.com www.vishay.com Revision: 07-Nov-08 1 80SQ... Series Schottky Rectifier, 8 A Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 8 A 0.53 T = 25 C J 16 A 0.60 Maximum forward voltage drop (1) V V FM See fig. 1 8 A 0.44 T = 125 C J 16 A 0.55 T = 25 C 2 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 15 J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz) 25 C 900 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 10.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 175 C J Stg temperature range Maximum thermal resistance, DC operation see fig. 4 R 8.0 thJL junction to lead 1/8 lead length C/W Typical thermal resistance, R 44 thJA junction to air 1.4 g Approximate weight 0.049 oz. 80SQ030 80SQ035 Marking device Case style DO-204AR (JEDEC) 80SQ040 80SQ045 www.vishay.com For technical questions, contact: diodes-tech vishay.com Document Number: 93398 2 Revision: 07-Nov-08