DB2J40600L Panasonic

Doc No. TT4-EA-13098 Revision. 2 Product Standards Schottky Barrier Diode DB2J40600L DB2J40600L Silicon epitaxial planar type Unit: mm For high speed switching circuits 1.25 0.13 0.35 2 Features Small reverse current IR Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol:4Q 1 0.5 0.7 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic SMini2-F5-B JEITA SC-90A Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR Internal Connection 40 V Repetitive peak reverse voltage VRRM 40 V 2 Average forward current IF (AV) 100 mA IFM Peak forward current 300 mA *1 IFSM Non-repetitive peak forward surge current 1 A Junction temperature Tj 125 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +125 C 1 50Hz sine wave 1 cycle ( Non-repetitive peak current ) Note: *1 Page 1of 4 Established : 2011-04-22 Revised : 2013-12-12 1.7 2.5Doc No. TT4-EA-13098 Revision. 2 Product Standards Schottky Barrier Diode DB2J40600L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA V 0.6 Reverse current IR VR = 40 V 5 A Terminal capacitance Ct VR = 10 V, f = 1 MHz pF 2.2 *1 trr IF = IR = 100 mA, Irr = 10 mA 0.9 ns Reverse recovery time 1. Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of lnput and output is 250 MHz 4. *1 : trr measurement circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 10 mA rr t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2 of 4 Established : 2011-04-22 Revised : 2013-12-12