DB2G42600L1 Panasonic

Doc No. TT4-EA-15070 Revision. 1 Product Standards Schottky Barrier Diode DB2G42600L1 DB2G42600L1 For rectification Unit: mm Features Average Forward Current IF(AV) 1.0 A rectification is possible Low Forward Voltage High power capability due to Chip Size Package RoHS compliant (EU RoHS / MSL:Level 1 compliant) Marking Symbol: D6 Packaging Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard) Absolute Maximum Ratings Parameter Symbol Min Max Unit *1 Reverse Voltage VR - 40 V *1 VRM V Maximum Peak Reverse Voltage - 40 *2,3 IF(AV) -1.0 A 1. Cathode Average Forward Current *2,4 Average Forward Current IF(AV) - 1.0 A 2. Anode *1,5 IFSM A Non-repetitive Peak Surge Forward Current - 10 *6 Tj - 150 C Panasonic DCSP1006010-N1 Operating Junction Temperature Ambient Temperature Ta C JEITA -40 +150 Storage Temperature Tstg -55 +150 C Code Note) *1: Ta = Tj = 25 *2: Squre wave : = 0.5 2 *3: Ta 85, when device mounted on a FR4 PCB (25.4mm25.4mm, 1mm thick), copper wiring (620.0mm area, 36m thick). *4: Tsp 136 *5: Squre wave : Tp = 5 ms IF Tp *6: Power derating is necessary so that Tj < 150. (Waveform definition) Tp Duty Cycle : = T Time T Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward Voltage VF IF = 1.0 A - 0.51 0.6 V Reverse Current IR VR = 40 V -2 30 A Terminal Capacitance Ct VR = 10 V, f = 1 MHz -28 - pF *1 trr IF = IR = 100 mA, Irr = 10 mA - 8.7 - ns Reverse Recovery Time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1: Measurement circuit, input pulse, output pulse for Reverse recovery time (Measurement circuit) (Input pulse) (Output pulse) tr tp trr t (2) IF (3) DUT (1) 10% t 90% Irr = IR 10 IR VR (1) Bias Insertion Unit (N-50BU) tp = 2 s IF = 100 mA (2) Pulse Generator (PG-10N), RS = 50 tr = 0.35 ns IR = 100 mA (3) Wave Form Analyzer (SAS-8130), Ri = 50 = 0.05 Irr = 10 mA 1of 8 Page Established : 2015-10-13 Revised : - - Doc No. TT4-EA-15070 Revision. 1 Product Standards Schottky Barrier Diode DB2G42600L1 Electrical Characteristics Technical Data (Reference) IF - VF / Typical Data Ct - VR / Typical Data 1.0E+01 200 (1) 180 1.0E+00 160 (2) 140 (4) 120 1.0E-01 100 80 1.0E-02 (3) 60 (4) 40 1.0E-03 (5) 20 0 1.0E-04 0 1020 3040 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage : VF V Reverse Voltage : VR V IR - VR / Typical Data (Graph legends) 1.0E-01 (1) 150 Ta = (2) Ta = 125 1.0E-02 (3) Ta = 85 (4) Ta = 25 (2) 1.0E-03 (5) Ta = -40 (3) 1.0E-04 1.0E-05 (4) 1.0E-06 1.0E-07 1.0E-08 (5) 1.0E-09 1.0E-10 0 1020 3040 Reverse Voltage : VR V 2of 8 Page Established : 2015-10-13 Revised : - - Reverse Current : IR A Forward Current : IF A Terminal Capacitance : Ct pF