VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3 www.vishay.com Vishay Semiconductors Ultralow V Hyperfast Rectifier for Discontinuous Mode PFC, F 8 A FRED Pt FEATURES Hyperfast recovery time Benchmark ultralow forward voltage drop 2 2 175 C operating junction temperature 3 3 Low leakage current 1 1 Fully isolated package (V = 2500 V ) INS RMS TO-220 FULL-PAK TO-220AC UL E78996 approved Base Base cathode cathode Designed and qualified according to 2 Available 2 JEDEC -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 1 3 1 3 DESCRIPTION Cathode Anode Cathode Anode State of the art, ultralow V , soft-switching hyperfast F VS-8ETL06PbF VS-8ETL06FPPbF rectifiers optimized for Discontinuous (Critical) Mode (DCM) VS-8ETL06-N3 VS-8ETL06FP-N3 Power Factor Correction (PFC). The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and PRODUCT SUMMARY reduce over dissipation in the switching element and Package TO-220AC, TO-220FP snubbers. I 8 A F(AV) The device is also intended for use as a freewheeling diode V 600 V R in power supplies and other power switching applications. V at I 0.81 V F F t typ. 60 ns rr APPLICATIONS T max. 175 C J AC/DC SMPS 70 W to 400 W Diode variation Single die e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Repetitive peak reverse voltage V 600 V RRM T = 160 C C Average rectified forward current I 8 F(AV) FULL-PAK T = 142 C C A Non-repetitive peak surge current I T = 25 C 175 FSM J Repetitive peak forward current I 16 FM Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 8 A - 0.96 1.05 F Forward voltage V F I = 8 A, T = 150 C - 0.81 0.86 F J V = V rated - 0.05 5 R R Reverse leakage current I A R T = 150 C, V = V rated - 20 100 J R R Junction capacitance C V = 600 V - 17 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 15-Nov-16 Document Number: 94028 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 60 100 F F R I = 8 A, dI /dt = 100 A/s, V = 30 V - 150 250 F F R Reverse recovery time t ns rr T = 25 C - 170 - J T = 125 C - 250 - J I = 8 A F T = 25 C - 15 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 20 - J V = 390 V R T = 25 C - 1.3 - J Reverse recovery charge Q C rr T = 125 C - 2.6 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range -1.4 2 Thermal resistance, R thJC junction to case (FULL-PAK) - 3.4 4.3 Thermal resistance, C/W R Typical socket mount - - 70 thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth R -0.5 - thCS case to heatsink and greased -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Case style TO-220AC 8ETL06 Marking device Case style TO-220 FULL-PAK 8ETL06FP Revision: 15-Nov-16 Document Number: 94028 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000