VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES Hyperfast recovery time Benchmark ultralow forward voltage drop 175 C operating junction temperature TO-220AC TO-220 FULL-PAK Low leakage current Base Fully isolated package (V = 2500 V ) INS RMS cathode UL E78996 approved 2 Available Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance 1 please see www.vishay.com/doc 99912 1 3 3 Cathode Anode Cathode Anode DESCRIPTION / APPLICATIONS VS-8ETX06PbFVS-8ETX06FPPbF State of the art hyperfast recovery rectifiers designed with VS-8ETX06-N3 VS-8ETX06FP-N3 optimized performance of forward voltage drop, hyperfast recover time, and soft recovery. PRODUCT SUMMARY The planar structure and the platinum doped life time control Package TO-220AC, TO-220FP guarantee the best overall performance, ruggedness and I 8 A F(AV) reliability characteristics. V 600 V R These devices are intended for use in PFC boost stage in the V at I 1.4 V F F AC/DC section of SMPS, inverters or as freewheeling t (typ.) 15 ns rr diodes. T max. 175 C J Their extremely optimized stored charge and low recovery Diode variation Single die current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUES UNITS Repetitive peak reverse voltage V 600 V RRM T = 143 C C Average rectified forward current I 8 F(AV) FULL-PAK T = 106 C C A Non-repetitive peak surge current I T = 25 C 110 FSM J Repetitive peak forward current I 18 FM Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 8 A - 2.3 3.0 F Forward voltage V F = 8 A, T = 150 C - 1.4 1.7 I F J V = V rated - 0.3 50 R R Reverse leakage current I A R T = 150 C, V = V rated - 35 500 J R R Junction capacitance C V = 600 V - 17 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 13-May-16 Document Number: 94032 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 15 19 F F R I = 8 A, dI /dt = 100 A/s, V = 30 V - 16 24 F F R Reverse recovery time t ns rr T = 25 C -17 - J T = 125 C - 40 - J I = 8 A F T = 25 C - 2.3 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.5 - J V = 390 V R T = 25 C - 20 - J Reverse recovery charge Q nC rr T = 125 C - 100 - J Reverse recovery time t -31 - ns rr I = 8 A F Peak recovery current I T = 125 C dI /dt = 600 A/s -12 - A RRM J F V = 390 V R Reverse recovery charge Q -195 - nC rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDTIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range -1.4 2 Thermal resistance, R thJC junction to case (FULL-PAK) - 3.4 4.3 Thermal resistance, C/W R Typical socket mount - - 70 thJA junction to ambient per leg Thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case to heatsink -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Case style TO-220AC 8ETX06 Marking device Case style TO-220 FULL-PAK 8ETX06FP 100 1000 T = 175 C J 100 T = 150 C J T = 125 C J 10 10 T = 100 C J 1 T = 175 C J 0.1 T = 150 C T = 25 C J J 1 T = 25 C J 0.01 0.001 0.1 0.0001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 100 200 300 400 500 600 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 13-May-16 Document Number: 94032 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous F Forward Current (A) I - Reverse Current (A) R