8EWS..SPbF High Voltage Series www.vishay.com Vishay Semiconductors Surface Mountable Input Rectifier Diode, 8 A FEATURES Base Material categorization: cathode For definitions of compliance please see 4, 2 www.vishay.com/doc 99912 DESCRIPTION 1 3 The 8EWS..SPbF rectifier High Voltage Series has been D-PAK Anode Anode optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 C junction temperature. The high reverse voltage range available allows design of PRODUCT SUMMARY input stage primary rectification with outstanding voltage Package D-PAK (TO-252AA) surge capability. I at T = 116 C 8 A F(AV) C Typical applications are in input rectification and these V 800 V, 1200 V products are designed to be used with Vishay R Semiconductors switches and output rectifiers which are V at I 1.1 V F F available in identical package outlines. I 200 A FSM This product has been designed and qualified for industrial T max. 150 C J level. Diode variation Single die OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS NEMA FR-4 or G10 glass fabric-based 1.2 1.6 epoxy with 4 oz. (140 m) copper Aluminum IMS, R = 15 C/W 2.5 2.8 A thCA Aluminum IMS with heatsink, 5.5 6.5 R = 5 C/W thCA Note 2 T = 55 C, T = 125 C, footprint 300 mm A J MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform at T = 116 C 8 A F(AV) C V 800/1200 V RRM I 200 A FSM V 8 A, T = 25 C 1.10 V F J T - 55 to 150 C J VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA 8EWS08SPbF 800 900 0.5 8EWS12SPbF 1200 1300 Revision: 16-Apr-13 Document Number: 94349 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 910008EWS..SPbF High Voltage Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 105 C, 180 conduction half sine wave 10 F(AV) C 10 ms sine pulse, rated V applied 170 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 200 10 ms sine pulse, rated V applied 130 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 145 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 1450 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 8 A, T = 25 C 1.1 V FM J Forward slope resistance r 20 m t T = 150 C J Threshold voltage V 0.82 V F(TO) T = 25 C 0.05 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 0.50 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 150 J Stg temperature range C Soldering temperature T 240 S Maximum thermal resistance, R DC operation 2.5 thJC junction to case C/W Typical thermal resistance, R 62 thJA (1) junction to ambient (PCB mount) 1g Approximate weight 0.03 oz. Marking device Case style D-PAK (TO-252AA) 8EWS12S Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W For recommended footprint and soldering techniques refer to application note AN-994 Revision: 16-Apr-13 Document Number: 94349 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000