VS-8EWS08S-M3, VS-8EWS12S-M3 www.vishay.com Vishay Semiconductors High Voltage Surface Mountable Input Rectifier Diode, 8 A FEATURES Base Glass passivated pellet chip junction cathode + Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 260 C Material categorization: 2 for definitions of compliance please see 3 www.vishay.com/doc 99912 1 13 Anode -- Anode DPAK (TO-252AA) APPLICATIONS Input rectification Vishay Semiconductors switches and output rectifiers which are available in identical package outlines PRIMARY CHARACTERISTICS I 8 A F(AV) DESCRIPTION V 800 V, 1200 V R The VS-8EWS..S-M3 rectifier high voltage series has been V at I 1.1 V F F optimized for very low forward voltage drop, with moderate I 150 A leakage. The glass passivation technology used has reliable FSM operation up to 150 C junction temperature. T max. 150 C J The high reverse voltage range available allows design of Package DPAK (TO-252AA) input stage primary rectification with outstanding voltage Circuit configuration Single surge capability. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS NEMA FR-4 or G10 glass fabric-based epoxy 1.2 1.6 with 4 oz. (140 m) copper A Aluminum IMS, R = 15 C/W 2.5 2.8 thCA Aluminum IMS with heatsink, R = 5 C/W 5.5 6.5 thCA Note 2 T = 55 C, T = 125 C, footprint 300 mm A J MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 8 A F(AV) V 800/1200 V RRM I 150 A FSM V 8 A, T = 25 C 1.10 V F J T -55 to +150 C J VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-8EWS08S-M3 800 900 0.5 VS-8EWS12S-M3 1200 1300 Revision: 24-Sep-2019 Document Number: 93383 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-8EWS08S-M3, VS-8EWS12S-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 105 C, 180 conduction half sine wave 8 F(AV) C 10 ms sine pulse, rated V applied 125 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 150 10 ms sine pulse, rated V applied 78 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 110 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 1100 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 8 A, T = 25 C 1.1 V FM J Forward slope resistance r 20 m t T = 150 C J Threshold voltage V 0.82 V F(TO) T = 25 C 0.05 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 0.50 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 2.5 thJC junction to case C/W Typical thermal resistance, (1) R 62 thJA junction to ambient (PCB mount) 1g Approximate weight 0.03 oz. 8EWS08S Marking device Case style DPAK (TO-252AA) 8EWS12S Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W For recommended footprint and soldering techniques refer to application note AN-994 Revision: 24-Sep-2019 Document Number: 93383 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000