VS-8EWX06FN-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES Hyperfast recovery time, extremely low Q rr 2, 4 175 C maximum operating junction temperature For PFC CCM operation Low forward voltage drop Low leakage current 1 3 N/C Anode Meets MSL level 1, per J-STD-020, LF maximum DPAK (TO-252AA) peak of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS I 8 A F(AV) State of the art hyperfast recovery rectifiers designed with V 600 V optimized performance of forward voltage drop, hyperfast R recovery time, and soft recovery. V at I 1.4 V F F The planar structure and the platinum doped life time t (typ.) 15 ns rr control guarantee the best overall performance, ruggedness T max. 175 C J and reliability characteristics. These devices are intended for use in PFC boost stage in the Package DPAK (TO-252AA) AC/DC section of SMPS inverters or as freewheeling diodes. Circuit configuration Single Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 140 C 8 F(AV) C Non-repetitive peak surge current I T = 25 C 90 A FSM J Peak repetitive forward current I T = 140 C, f = 20 kHz, d = 50 % 16 FM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 8 A - 2.3 3.0 F Forward voltage V F I = 8 A, T = 150 C - 1.4 1.7 F J V = V rated - - 50 R R Reverse leakage current I A R T = 150 C, V = V rated - - 500 J R R Junction capacitance C V = 600 V - 7 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 11-Apr-18 Document Number: 93244 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-8EWX06FN-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 15 19 F F R Reverse recovery time t T = 25 C -17- ns rr J T = 125 C - 40 - J I = 8 A F T = 25 C - 2.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.5 - J V = 390 V R T = 25 C - 22 - J Reverse recovery charge Q nC rr T = 125 C - 70 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.82.2C/W thJC junction to case per leg 0.3 g Approximate weight 0.01 oz. Marking device Case style DPAK (TO-252AA) 8EWX06FN Revision: 11-Apr-18 Document Number: 93244 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000