VS-8ETH03SPbF, VS-8ETH03-1PbF www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature 2 TO-263AB (D PAK) TO-262AA Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Base AEC-Q101 qualified cathode 2 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS Vishay Semiconductors 300 V series are the state of the art 1 3 1 3 hyperfast recovery rectifiers designed with optimized N/C Anode N/C Anode performance of forward voltage drop and hyperfast VS-8ETH03SPbF VS-8ETH03-1PbF recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and PRODUCT SUMMARY reliability characteristics. 2 Package TO-263AB (D PAK), TO-262AA These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as I 8 A F(AV) freewheeling diodes in low voltage inverters and chopper V 300 V R motor drives. V at I 0.83 V F F Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over t 35 ns rr dissipation in the switching element and snubbers. T max. 175 C J Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V 300 V RRM Average rectified forward current I T = 155 C 8 F(AV) C A Non-repetitive peak surge current I T = 25 C 100 FSM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 300 - - R blocking voltage V R V I = 8 A - 1.0 1.25 F Forward voltage V F I = 8 A, T = 125 C - 0.83 1.00 F J V = V rated - 0.02 20 R R Reverse leakage current I A R T = 125 C, V = V rated - 6.0 200 J R R Junction capacitance C V = 300 V - 31 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 09-Jul-15 Document Number: 94025 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-8ETH03SPbF, VS-8ETH03-1PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = - 50 A/s, V = 30 V - - 35 F F R Reverse recovery time t T = 25 C -27 - ns rr J T = 125 C - 40 - J I = 8 A F T = 25 C - 2.2 - J Peak recovery current I dI /dt = - 200 A/s A RRM F T = 125 C - 5.3 - J V = 200 V R T = 25 C - 30 - J Reverse recovery charge Q nC rr T = 125 C - 106 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.452.5 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth and R -0.2 - thCS case to heatsink greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style TO-263AB (D PAK) 8ETH03S Marking device Case style TO-262 8ETH03-1 Revision: 09-Jul-15 Document Number: 94025 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000