VS-8ETH06FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop 175 C operating junction temperature Low leakage current 1 Fully isolated package (V = 2500 V ) INS RMS 2 UL pending 2L TO-220 FullPAK Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 1 2 Cathode Anode DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with VS-8ETH06FP-N3 optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. PRIMARY CHARACTERISTICS The planar structure and the platinum doped life time control I 8 A F(AV) guarantee the best overall performance, ruggedness and V 600 V R reliability characteristics. V at I 1.3 V F F These devices are intended for use in PFC boost stage in the t typ. 18 ns rr AC/DC section of SMPS, inverters or as freewheeling T max. 175 C diodes. J Package 2L TO-220 FullPAK Their extremely optimized stored charge and low recovery Circuit configuration Single current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current I T = 108 C 8 F(AV) C Non-repetitive peak surge current I 100 A FSM Repetitive peak forward current I 16 FM Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 8 A - 2.0 2.4 F Forward voltage V F I = 8 A, T = 150 C - 1.3 1.8 F J V = V rated - 0.3 50 R R Reverse leakage current I A R T = 150 C, V = V rated - 55 500 J R R Junction capacitance C V = 600 V - 17 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 26-Oct-17 Document Number: 96429 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-8ETH06FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 18 22 F F R I = 8 A, dI /dt = 100 A/s, V = 30 V - 20 25 F F R Reverse recovery time t ns rr T = 25 C -25- J T = 125 C - 40 - J I = 8 A F T = 25 C - 2.4 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.8 - J V = 390 V R T = 25 C - 25 - J Reverse recovery charge Q nC rr T = 125 C - 120 - J Reverse recovery time t -33- ns rr I = 8 A F Peak recovery current I T = 125 C dI /dt = 600 A/s -12- A RRM J F V = 390 V Reverse recovery charge Q R - 220 - nC rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -3.44.3C/W thJC junction-to-case Thermal resistance, R Typical socket mount - - 70 thJA junction-to-ambient per leg Thermal resistance, Mounting surface, flat, smooth, and R -0.5 - thCS case-to-heatsink greased -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style 2L TO-220 FullPAK 8ETH06FP 100 1000 T = 175 C J 100 T = 150 C J 10 10 T = 125 C J T = 100 C J 1 T = 175 C J T = 150 C J 1 0.1 T = 25 C J T = 25 C J 0.01 0.1 0.001 0 100 200 300 400 500 600 01 23 4 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 26-Oct-17 Document Number: 96429 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R