VS-8ETU04SPbF, VS-8ETU04-1PbF www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 8 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature 2 TO-263AB (D PAK) TO-262AA Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Base AEC-Q101 qualified cathode 2 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS Vishay Semiconductors FRED Pt series are the state of the 3 1 3 1 art ultrafast recovery rectifiers specifically designed with N/C Anode N/C Anode optimized performance of forward voltage drop and ultrafast VS-8ETU04SPbFVS-8ETU04-1PbF recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, PRODUCT SUMMARY ruggedness and reliability characteristics. 2 Package TO-263AB (D PAK), TO-262AA These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as I 8 A F(AV) freewheeling diode in low voltage inverters and chopper V 400 V R motor drives. V at I 0.94 V F F Their extremely optimized stored charge and low recovery t typ. 35 ns current minimize the switching losses and reduce over rr dissipation in the switching element and snubbers. T max. 175 C J Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Repetitive peak reverse voltage V 400 V RRM Average rectified forward current I T = 155 C 8 F(AV) C Non-repetitive peak surge current I T = 25 C 100 A FSM C Repetitive peak forward current I 16 FRM Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 400 - - R blocking voltage V R V I = 8 A - 1.19 1.3 F Forward voltage V F I = 8 A, T = 150 C - 0.94 1.0 F J V = V rated - 0.2 10 R R Reverse leakage current I A R T = 150 C, V = V rated - 20 500 J R R Junction capacitance C V = 400 V - 14 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 10-Jul-15 Document Number: 94031 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-8ETU04SPbF, VS-8ETU04-1PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 35 60 F F R Reverse recovery time t T = 25 C -43- ns rr J T = 125 C - 67 - J I = 8 A F T = 25 C - 2.8 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 6.3 - J V = 200 V R T = 25 C - 60 - J Reverse recovery charge Q nC rr T = 125 C - 210 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, junction to case R -1.82.0 thJC Thermal resistance, junction to ambient R Typical socket mount - - 50 thJA C/W Mounting surface, flat, smooth Thermal resistance, case to heatsink R -0.5 - thCS and greased -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style TO-263AB (D PAK) 8ETU04S Marking device Case style TO-262 8ETU04-1 Revision: 10-Jul-15 Document Number: 94031 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000