VS-8ETU04HN3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 8 A FRED Pt FEATURES Ultrafast recovery time Base cathode Low forward voltage drop 2 175 C operating junction temperature Low leakage current AEC-Q101 qualified, meets JESD 201, class 2 1 3 whisker test Cathode Anode TO-220AC Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS FRED Pt series are the state of the art ultrafast recovery PRODUCT SUMMARY rectifiers specifically designed with optimized performance Package TO-220AC of forward voltage drop and ultrafast recovery time. I 8 A F(AV) The planar structure and the platinum doped life time V 400 V R control, guarantee the best overall performance, V at I 0.94 V F F ruggedness and reliability characteristics. t typ. See Recovery table rr These devices are intended for use in the output T max. 175 C rectification stage of SMPS, UPS, DC/DC converters as well J as freewheeling diode in low voltage inverters and chopper Diode variation Single die motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Repetitive peak reverse voltage V 400 V RRM Average rectified forward current I T = 155 C 8 F(AV) C Non-repetitive peak surge current I T = 25 C 100 A FSM C Repetitive peak forward current I 16 FRM Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 400 - - R blocking voltage V R V I = 8 A - 1.19 1.3 F Forward voltage V F I = 8 A, T = 150 C - 0.94 1.0 F J V = V rated - 0.2 10 R R Reverse leakage current I A R T = 150 C, V = V rated - 20 500 J R R Junction capacitance C V = 400 V - 14 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 09-Oct-15 Document Number: 95840 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-8ETU04HN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 35 60 F F R Reverse recovery time t T = 25 C -43 - ns rr J T = 125 C - 67 - J I = 8 A F T = 25 C - 2.8 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 6.3 - J V = 200 V R T = 25 C - 60 - J Reverse recovery charge Q nC rr T = 125 C - 210 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, R -1.82 thJC junction to case Thermal resistance, R Typical socket mount - - 50 C/W thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth R -0.5 - thCS case to heatsink and greased -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-220AC 8ETU04H 100 1000 T = 175 C 100 J T = 150 C J 10 T = 125 C J 10 T = 100 C J 1 T = 175 C J 0.1 T = 25 C J T = 150 C J 1 T = 25 C J 0.01 0.001 0.1 0.0001 0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 09-Oct-15 Document Number: 95840 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous F Forward Current (A) I - Reverse Current (A) R