VS-8ETX06S-M3, VS-8ETX06-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 2 1 175 C operating junction temperature 1 Meets MSL level 1, per J-STD-020, LF maximum 3 2 peak of 245 C 2 TO-262AA D PAK (TO-263AB) 3 Material categorization: for definitions of compliance Base please see www.vishay.com/doc 99912 cathode 2 2 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. 1 3 1 3 Anode The planar structure and the platinum doped life time control N/C N/C Anode guarantee the best overall performance, ruggedness and VS-8ETX06S-M3 VS-8ETX06-1-M3 reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling PRIMARY CHARACTERISTICS diodes. I 8 A F(AV) Their extremely optimized stored charge and low recovery V 600 V R current minimize the switching losses and reduce over V at I 1.4 V F F dissipation in the switching element and snubbers. t typ. 15 ns rr T max. 175 C J 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX.UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 143 C 8 F(AV) C Non-repetitive peak surge current I T = 25 C 110 A FSM J Peak repetitive forward current I 18 FM Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 8 A - 2.3 3.0 F Forward voltage V F I = 8 A, T = 150 C - 1.4 1.7 F J V = V rated - 0.3 50 R R Reverse leakage current I A R T = 150 C, V = V rated - 35 500 J R R Junction capacitance C V = 600 V - 17 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 25-Oct-17 Document Number: 96242 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-8ETX06S-M3, VS-8ETX06-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 15 19 F F R I = 8 A, dI /dt = 100 A/s, V = 30 V - 16 24 F F R Reverse recovery time t ns rr T = 25 C -17- J T = 125 C - 40 - J I = 8 A F T = 25 C - 2.3 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.5 - J V = 390 V R T = 25 C - 20 - J Reverse recovery charge Q nC rr T = 125 C - 100 - J Reverse recovery time t -31- ns rr I = 8 A F Peak recovery current I T = 125 C dI /dt = 600 A/s -12- A RRM J F V = 390 V Reverse recovery charge Q R - 195 - nC rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.42 thJC junction-to-case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction-to-ambient per leg Thermal resistance, Mounting surface, flat, smooth, and R -0.5 - thCS case-to-heatsink greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style D PAK (TO-263AB) 8ETX06S Marking device Case style TO-262AA 8ETX06-1 T = 175 C J T = 150 C J T = 125 C J T = 100 C J T = 175 C J T = 150 C J T = 25 C J T = 25 C J 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 100 200 300 400 500 600 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 25-Oct-17 Document Number: 96242 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 100 1000 100 10 10 1 0.1 1 0.01 0.001 0.1 0.0001 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R