VS-8EVH06-M3/I Vishay

333 3 VS-8EVH06-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES eSMP Series Heatsink Hyperfast recovery time, reduced Q and soft rr recovery k For PFC CRM / CCM operation kk Low forward voltage drop, low power losses Low leakage current 11 2 Meets MSL level 1, per J-STD-020, LF maximum peak 1 of 260 C Pin 1 Pin 2 22 Meets JESD 201 class 2 whisker test SlimDPAK (TO-252AE) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D Models These devices are intended for use in PFC boost stage in th e AC/DC section of SMPS inverters, or as freewheelin g diodes. Their extremely optimized stored charge and low PRIMARY CHARACTERISTICS recovery current minimize the switching losses and reduce I 8 A over dissipation in the switching element and snubbers. F(AV) V 600 V R MECHANICAL DATA V at I 1.3 V F F Case: SlimDPAK (TO-252AE) t (typ.) 16 ns rr Molding compound meets UL 94 V-0 flammability rating T max. 175 C J Base PN/-M3 - halogen-free, RoHS-compliant Package SlimDPAK (TO-252AE) Terminals: matte tin plated leads, solderable per Circuit configuration Single J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 144 C 8 F(AV) C A Non-repetitive peak surge current I T = 25 C, 10 ms sine pulse wave 90 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 8 A - 1.6 2.40 V F Forward voltage V F I = 8 A, T = 150 C - 1.3 1.7 F J V = V rated - - 20 R R Reverse leakage current I A R T = 150 C, V = V rated - - 500 J R R Junction capacitance C V = 600 V - 12 - pF T R Revision: 12-Jan-2021 Document Number: 96151 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-8EVH06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 21 - F F R I = 1 A, dI /dt = 100 A/s, V = 30 V - 16 - F F R Reverse recovery time t I = 0.5 A, I = 1 A, I = 0.25 A - - 25 ns rr F R RR T = 25 C -25 - J T = 125 C - 65 - J I = 8 A F T = 25 C - 4.9 - J Peak recovery current I dI /dt = 500 A/s A RRM F T = 125 C - 8.2 - J V = 400 V R T = 25 C - 90 - J Reverse recovery charge Q nC rr T = 125 C - 260 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature T , T -55 - 175 C J Stg range Thermal resistance, junction to mount R -- 2.2 C/W thJM Marking device Case style SlimDPAK (TO-252AE) 8EVH06 100 1000 175 C 100 150 C T = 175 C 10 J 10 1 T = 150 C J 1 0.1 25 C T = 25 C J T = -40 C J 0.01 0.1 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 V -Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 12-Jan-2021 Document Number: 96151 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R