VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 8 A FEATURES Base cathode Glass passivated pellet chip junction + 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: 2 for definitions of compliance please see 3 www.vishay.com/doc 99912 13 1 Anode -- Anode TO-252AA (D-PAK) APPLICATIONS Output rectification and freewheeling diode in inverters, PRODUCT SUMMARY choppers and converters Package TO-252AA (D-PAK) Input rectifications where severe restrictions on I 8 A F(AV) conducted EMI should be met V 200 V, 400 V, 600 V R V at I 1.2 V DESCRIPTION F F I 150 A FSM The VS-8EWF..S-M3 fast soft recovery rectifier series has t 55 ns been optimized for combined short reverse recovery time, rr low forward voltage drop and low leakage current. T max. 150 C J The glass passivation ensures stable reliable operation in Diode variation Single die the most severe temperature and power cycling conditions. Snap factor 0.5 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 8 A F(AV) V 200 to 600 V RRM I 150 A FSM V 8 A, T = 25 C 1.2 V F J t 1 A, 100 A/s 55 ns rr T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-8EWF02S-M3 200 300 VS-8EWF04S-M3 400 500 3 VS-8EWF06S-M3 600 700 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 96 C, 180 conduction half sine wave 8 F(AV) C 10 ms sine pulse, rated V applied 125 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 150 10 ms sine pulse, rated V applied 78 RRM 2 2 2 t for fusing I t s Maximum I A 10 ms sine pulse, no voltage reapplied 110 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 1100 A s 16-Jan-17 Document Number: 93375 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 8 A, T = 25 C 1.2 V FM J Forward slope resistance r 16 m t T = 150 C J Threshold voltage V 1.13 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 3 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I at 1 A F pk 100 A/s 55 I Reverse recovery time t ns FM rr T = 25 C J t rr 200 t t a b I at 8 A t F pk di Reverse recovery current I 25 A/s 2.6 A rr dt Q rr T = 25 C J I rr Reverse recovery charge Q 0.25 C rr Snap factor S 0.5 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 2.5 thJC junction to case C/W Typical thermal resistance, (1) R 50 thJA junction to ambient (PCB mount) 1g Approximate weight 0.03 oz. 8EWF02S Marking device Case style TO-252AA (D-PAK) 8EWF04S 8EWF06S Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W For recommended footprint and soldering techniques refer to application note AN-994 16-Jan-17 Document Number: 93375 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000