VS-6CWQ06FN-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 3.5 A FEATURES Base common Low forward voltage drop cathode 4 Guard ring for enhanced ruggedness and long term reliability Popular DPAK outline Center tap configuration 2 Common Small foot print, surface mountable cathode DPAK (TO-252AA) High frequency operation 13 Anode Anode Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 I 2 x 3.5 A F(AV) V 60 V R DESCRIPTION V at I See Electrical table F F The VS-6CWQ06FN-M3 surface mount, center tap, I 30 mA at 125 C RM Schottky rectifier series has been designed for applications T max. 150 C J requiring low forward drop and small foot prints on PC E 6 mJ AS board. Typical applications are in disk drives, switching Package DPAK (TO-252AA) power supplies, converters, freewheeling diodes, battery Circuit configuration Common cathode charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 7 A F(AV) V 60 V RRM I t = 5 s sine 490 A FSM p V 3 A , T = 25 C (per leg) 0.61 V F pk J T Range -40 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-6CWQ06FN-M3 UNITS Maximum DC reverse voltage V R 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS per leg 3.5 Maximum average forward I 50 % duty cycle at T = 133 C, rectangular waveform F(AV) C current, see fig. 5 per device 7 A Following any rated load 5 s sine or 3 s rect. pulse 490 Maximum peak one cycle non-repetitive I condition and with rated FSM surge current see fig. 7 10 ms sine or 6 ms rect. pulse 70 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 12 mH 6 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 27-Aug-2019 Document Number: 93317 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-6CWQ06FN-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 3 A 0.61 T = 25 C J Maximum forward voltage drop per 6 A 0.76 (1) V V FM leg, see fig. 1 3 A 0.53 T = 125 C J 6 A 0.65 T = 25 C 2 Maximum reverse leakage current J (1) I V = Rated V mA RM R R per leg, see fig. 2 T = 125 C 30 J Threshold voltage V 0.38 V F(TO) T = T maximum J J Forward slope resistance r 34.31 m t Typical junction capacitance per leg C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 145 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS (1) Maximum junction and storage temperature range T , T -40 to +150 C J Stg per leg 4.70 Maximum thermal resistance, DC operation R C/W thJC junction to case per device See fig. 4 2.35 0.3 g Approximate weight 0.01 oz. Marking device Case style DPAK (TO-252AA) 6CWQ06FN Note dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 27-Aug-2019 Document Number: 93317 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000