VS-6CWQ10FN-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 3.5 A FEATURES Base common Low forward voltage drop cathode 4 Guard ring for enhanced ruggedness and long term reliability Popular D-PAK outline Center tap configuration 2 Small foot print, surface mountable Common cathode High frequency operation D-PAK (TO-252AA) 13 Anode Anode Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY Package D-PAK (TO-252AA) DESCRIPTION I 2 x 3.5 A F(AV) The VS-6CWQ10FN-M3 surface mount, center tap, V 100 V R Schottky rectifier series has been designed for applications requiring low forward drop and small foot prints on PC V at I See Electrical table F F board. Typical applications are in disk drives, switching I 4.9 mA at 125 C RM power supplies, converters, freewheeling diodes, battery T max. 150 C J charging, and reverse battery protection. Diode variation Common cathode E 5 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 7 A F(AV) V 100 V RRM I t = 5 s sine 440 A FSM p V 3 A , T = 125 C (per leg) 0.63 V F pk J T Range -40 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-6CWQ10FN-M3 UNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 3.5 forward current I 50 % duty cycle at T = 135 C, rectangular waveform F(AV) C per device 7 See fig. 5 A Maximum peak one cycle Following any rated load 5 s sine or 3 s rect. pulse 440 non-repetitive surge current per leg I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 70 See fig. 7 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 10 mH 5.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 0.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 22-Nov-16 Document Number: 93318 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-6CWQ10FN-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 3 A 0.81 T = 25 C J Maximum forward 6 A 0.96 (1) voltage drop per leg V V FM 3 A 0.63 See fig. 1 T = 125 C J 6 A 0.74 Maximum reverse T = 25 C 1 J (1) leakage current per leg I V = Rated V mA RM R R T = 125 C 4.9 See fig. 2 J Threshold voltage V 0.48 V F(TO) T = T maximum J J Forward slope resistance r 30.89 m t Typical junction capacitance per leg C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 92 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T -40 to +150 C J Stg temperature range per leg 4.70 Maximum thermal resistance, DC operation R C/W thJC junction to case See fig. 4 per device 2.35 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) 6CWQ10FN Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 22-Nov-16 Document Number: 93318 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000