333 3 VS-6ESH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 6 A FRED Pt FEATURES eSMP Series Hyperfast recovery time, reduced Q , and soft rr recovery K 175 C maximum operating junction temperature Anode 1 K Specified for output and snubber operation Cathode Anode 2 Low forward voltage drop 1 Low leakage current 2 Meets MSL level 1, per J-STD-020, LF maximum peak SMPC (TO-277A) of 260 C Meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS 3D Models State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. PRIMARY CHARACTERISTICS The planar structure and the platinum doped life time control I 6 A F(AV) guarantee the best overall performance, ruggedness, and V 200 V R reliability characteristics. V at I 0.74 V F F These devices are intended for use in snubber, boost, t 28 ns rr (typ.) lighting, as high frequency rectifiers and freewheelin g T max. 175 C J diodes. Package SMPC (TO-277A) The extremely optimized stored charge and low recovery Circuit configuration Single current minimize the switching losses and reduce power dissipation in the switching element. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 200 V RRM Average rectified forward current I T = 160 C 6 F(AV) Sp A Non-repetitive peak surge current I T = 25 C 150 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 200 - - BR R R I = 6 A - 0.87 0.94 V F Forward voltage V F I = 6 A, T = 125 C - 0.74 0.8 F J V = V rated - - 2 R R Reverse leakage current I A R T = 125 C, V = V rated - 3 15 J R R Junction capacitance C V = 200 V - 33 - pF T R Revision: 21-Jan-2021 Document Number: 94982 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-6ESH02-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 28 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R rr Reverse recovery time t ns rr T = 25 C -22- J T = 125 C - 33 - J I = 6 A F T = 25 C - 2.4 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 5.0 - J V = 160 V R T = 25 C - 27 - J Reverse recovery charge Q nC rr T = 125 C - 80 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - 175 C J Stg temperature range Thermal resistance, junction to mount R -2.2 3 thJM C/W Thermal resistance, junction to ambient R -85- thJA 0.1 g Approximate weight 0.0035 oz. Marking device Case style SMPC (TO-277A) NEH2 100 100 175 C 150 C 10 125 C 10 1 T = 175 C J 25 C 0.1 T = 150 C J 1 T = 125 C J T = 25 C J 0.01 T = -40 C J 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 21-Jan-2021 Document Number: 94982 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R